Physical Model of Temporary Current Instability in Ion- Selective Field-Effect Transistors With Silicon Oxide/Nitride Dielectric Layers
O. L. Kukla,
A. S. Pavluchenko,
S. V. Dzyadevych
et al.
Abstract:The work is devoted to the study of the instability (drift) of the threshold voltage of p-channel ion selective field- effect transistors (ISFET) with an induced channel, caused by the long-term effect of a negative voltage applied to the channel section of the transistor through a double- layer dielectric SiO2/Si3N4. Based on the obtained experimental data, a physical model of the observed instability is proposed, according to which it is caused by the process of accumulation of an unbalanced positive charge … Show more
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