Physical modelling of the melt flow during large-diameter silicon single crystal growth

Experimental study on the effect of crystal and crucible rotations on the thermal and velocity field in a low Prandtl number melt in a large crucible

“…If the distance from the center of the crystal is more than 250 mm, inward flow is observed again. These results are different from those of Gorbunov et al [4]. Gorbunov measured radial velocities in InGaSn melt when the crystal rotation rate was 15 rpm without crucible rotation in a 600 mm diameter of crucible.…”

“…So physical modelings at low temperature have been tried using similar Pr number melts (InGaSn, mercury) with silicon melt [2][3][4]. Lee et al measured the oscillatory thermal fluctuation in a model experiment with mercury (160 mm diameter crucible) [2,3].…”

“…Lee et al measured the oscillatory thermal fluctuation in a model experiment with mercury (160 mm diameter crucible) [2,3]. Gorbunov et al presented the temperature field in InGaSn melt (500 mm diameter crucible) [4]. However, understandings on the behavior of the fluid flow and temperature fluctuation in the large crucible are insufficient.…”

Monocrystalline silicon used for integrated circuits: still on the way

“…By using InGaSn eutectic as the modeling liquid, employing the actual criteria of the real process (Prandtl, Revnolds, Grashof numbers, etc.) and geometric similarity, one can simulate the real melt flow during largediameter silicon single crystal growth and check the numerical simulation through collecting and processing the temperature and flow velocity data [19].…”

Characteristics of thermal fluctuation in a low Pr number melt at a large crucible for Czochralski crystal growth method

“…Some physical modelings using low melting temperature melts (InGaSn, Mercury) have been tried [4,5]. Lee et al [5] measured the oscillatory convections in mercury (diameter ¼ 160 mm).…”