Physical Models for Compound Semiconductor Devices

Shur, M. S.

doi:10.1007/978-1-4471-1033-0_7

Cited by 6 publications

(8 citation statements)

References 46 publications

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“…There is an alternative way of viewing the impact of flow of lateral current at the S/I interface outside the channel region in terms of source resistance R source . This resistance would give rise to extra voltage drop causing increase in threshold voltage, degradation in transconductance [29], and device speed. The model developed for effective source length is used to derive an analytical expression for source resistance in section 4.…”

Section: Current Crowding and Effective Source Lengthmentioning

confidence: 99%

“…A transmission-line model [29] is commonly used to understand current distribution and obtain expressions for contact resistance in inorganic semiconductor devices. In the transmission-line model, the current-voltage behavior is assumed to be linear and therefore the model uses resistors as its elements.…”

Section: Analytical Model For Effective Source Contact Lengthmentioning

confidence: 99%

“…Despite the well-recognized advantages of analytical models in terms of its ability to provide insight into device operation and its necessity for circuit analysis and design, there has been only one report of a transmission-line-based model for contact resistance [28]. However, this model is similar to transmission-line models developed for inorganic field effect transistors [29,30] and ignores the fact that current injection and flow in organic semiconductors can be far from ohmic [31,32]. Further, the model does not explicitly reveal the dependence of contact resistance on important device parameters.…”

Section: Introductionmentioning

confidence: 99%

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An analytical model for current crowding and source contact resistance in top-contact organic thin-film transistors

Islam

Mazhari

2008

Semicond. Sci. Technol.

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An analysis of current crowding and source contact resistance in top-contact organic thin-film transistors (OTFTs) is described. The dependence of the effective source length, over which significant current flows, on device structural parameters is investigated using 2D numerical simulations and a transmission-line-based analytical model is proposed which offers insight into the simulation results. An analytical expression for source resistance is derived which predicts that source resistance should decrease with increase in field effect mobility and gate-source voltage, and increase with semiconductor and insulator film thicknesses in agreement with reported experimental results.

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Section: Current Crowding and Effective Source Lengthmentioning

confidence: 99%

Section: Analytical Model For Effective Source Contact Lengthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An analytical model for current crowding and source contact resistance in top-contact organic thin-film transistors

Islam

Mazhari

2008

Semicond. Sci. Technol.

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“…A phosphorous atom density of 2.8 × 10 15 cm -3 aligns well with the vendor-specified 1.3-2.5 cm resistivity of the silicon wafers utilized in the present studies. 38 Equation 2 yields b,n values assuming a phosphorus dopant density of 2.8 × 10 15 cm -3 based on an estimated wafer resistivity of 2.0 cm, and N c = 3.2 × 10 19 cm -3 , 39 and the extrapolated E FB values. For the impedance data depicted in Fig.…”

Section: Photoelectrochemistry Of N-si(111) In a Thin-layer Cell-figurementioning

confidence: 99%

Dual Liquid Junction Photoelectrochemistry: Part I. Dual-Cuvette and Dual-Thin-Film Cells for Screening and Quantification of Back-Contact Properties

Kalan¹,

Russell²,

Taylor³

et al. 2017

J. Electrochem. Soc.

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We explore methods for utilizing electrochemical redox contacts both at the front and back of illuminated semiconductors. A dual cuvette cell utilizes a cuvette/gasket/semiconductor/gasket/cuvette sandwich with rapid stirring and the capability for fourelectrode measurements. Results from the dual-cuvette cell include current density-potential (J-E) scans with a cobaltocene +/0 back contact to n-Si(111) and a ferrocene +/0 front contact facing the illumination source, and a logarithmic plot of short-circuit current density vs open-circuit photovoltage for several illumination intensities to quantify the diode ideality factor for this cell. An ITO/liquid/semiconductor/liquid/ITO sandwich in a two-electrode configuration comprises a thin-layer cell. Thin-layer cell results include J-E scans as well as electrochemical impedance/Mott-Schottky analysis of flatband potentials. Results on n-Si(111) electrodes with two liquid junction contacts resemble results from traditional photoelectrochemical cells with a rectifying liquidjunction front contact and a rear metal contact.

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“…This may be due to the fact that the energy gap difference (~2.8 eV) between A1N and GaN is larger than that (-0.75 eV) of AlAs and GaAs by a factor of about 4. Specifically, the piezoelectric constant of GaN is also larger than that of GaAs by a factor of about 4 [15].…”

mentioning

confidence: 98%

Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

Kim

Lin

Jiang

et al. 1998

Applied Physics Letters

106

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Abstract:Piezoelectric effects on the optical properties of GaN/AlGaN multiple quantum wells (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. For MQWs with well thickness 30 A and 40 A, the excitonic transition peak positions at 10 K in continuous wave (cw) spectra are redshifted with respect to the GaN epilayer by 17 meV and 57 meV, respectively. The time-resolved PL spectra of the 30 A and 40 A well MQWs reveal that the excitonic transition is in fact blueshifted at early delay times due to quantum confinement of carriers. The spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. We have demonstrated that the results described above is due to the presence of the piezoelectric field in the GaN wells of GaN/AlGaN MQWs subject to elastic strain together with screening of the photoexcited carriers. By comparing experimental and calculation results, we conclude that the piezoelectric field strength in GaN/Alo.isGao.8sN MQWs has a lower limit value of about 560 kV/cm. The electron and hole wave function distributions have also been obtained. The implication of our findings on the practical applications of GaN based optoelectronic devices is also discussed.

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Physical Models for Compound Semiconductor Devices

Cited by 6 publications

References 46 publications

An analytical model for current crowding and source contact resistance in top-contact organic thin-film transistors

An analytical model for current crowding and source contact resistance in top-contact organic thin-film transistors

Dual Liquid Junction Photoelectrochemistry: Part I. Dual-Cuvette and Dual-Thin-Film Cells for Screening and Quantification of Back-Contact Properties

Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

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