Physical properties of ALD-Al2O3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors

Jakschik, S.; Schroeder, Uwe; Hecht, T.; Dollinger, G.; Bergmaier, A.; Bartha, Johann W.

doi:10.1016/j.mseb.2003.09.044

Cited by 22 publications

(8 citation statements)

References 7 publications

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“…On silicon, significant growth of interfacial oxide during post deposition annealing at 800˚C in N 2 was reported and identified as silicate formation [14]. Moreover, Al diffusion into the Si substrate [15] as well as silicon out-diffusion [6] was reported. The interface oxide growth is enhanced by annealing in oxygen environment [16], however, also in vacuum or in nitrogen, interface oxide is formed by residual oxygen in the AlO x film [15].…”

Section: Introductionmentioning

confidence: 99%

“…The resulting films are still amorphous. It is expected that the formation of crystalline Al 2 O 3 via high temperature annealing could further reduce fixed interface charges [5] [6], thus, stabilizing the electrical properties of the material [7]. For example, dielectric constants exceeding 10 have been reported after crystallization at temperatures above 1000˚C [8].…”

Section: Introductionmentioning

confidence: 99%

“…The presence of additional oxygen and hydrogen as well as grain boundaries and morphological defects has direct impact on the electrical properties of the AlO x films. Consequently, improved dielectric properties (lower trap density and higher dielectric constant) were observed upon annealing [6] [11], however, on the cost of increased leakage current and decreased breakdown voltage [19].…”

Section: Introductionmentioning

confidence: 99%

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Densification of Thin Aluminum Oxide Films by Thermal Treatments

Cimalla

Baeumler²,

Kirste³

et al. 2014

MSA

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Thin AlO x films were grown on 4H-SiC by plasma-assisted atomic layer deposition (ALD) and plasma assisted electron-beam evaporation at 300˚C. After deposition, the films were annealed in nitrogen at temperatures between 500˚C and 1050˚C. The films were analyzed by X-ray reflectivity (XRR) and atomic force microscopy (AFM) in order to determine film thickness, surface roughness and density of the AlO x layer. No differences were found in the behavior of AlO x films upon annealing for the two different employed deposition techniques. Annealing results in film densification, which is most prominent above the crystallization temperature (800˚C). In addition to the increasing density, a mass loss of ~5% was determined and attributed to the presence of aluminum oxyhydroxide in as deposited films. All changes in film properties after high temperature annealing appear to be independent of the deposition technique.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Densification of Thin Aluminum Oxide Films by Thermal Treatments

Cimalla

Baeumler²,

Kirste³

et al. 2014

MSA

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“…Nevertheless, ALD processing has already proven itself in production schemes for, e.g., electroluminescent displays, 2 while ALD is currently also being introduced in deep trench capacitors in dynamic random access memory at the production level. [3][4][5] Furthermore, ALD is at the verge of being introduced in the production of complementary metal-oxide semiconductor capacitor stacks while the application of ALD films at the interconnect level of state-of-the-art integrated circuits is actively being researched. 6 More recently, the scope of potential applications has been widened with research on ALD films rapidly emerging in fields such as flexible electronics, 7,8 photovoltaics, 9,10 photonics, 11,12 and microsystems.…”

Section: Introductionmentioning

confidence: 99%

Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor

Heil¹,

Hemmen²,

Hodson³

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

128

110

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“…Because of its ability to deliver excellent thickness control, purity and conformality down to a monolayer of material deposited, atomic layer deposition (ALD) is a preferred technique to deposit ultrathin dielectric films in high aspect ratio structures, as required for DRAM capacitors (13,14), for example. In general, plasma-enhanced ALD (PEALD) -in which the oxidizing/reducing agent is provided by a plasma -offers more versatility and other potential benefits over traditional thermal ALD processes (15).…”

Section: Plasma-enhanced Atomic Layer Depositionmentioning

confidence: 99%

Plasma-Enhanced ALD of TiO₂ Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(Cp^Me)(NMe₂)₃] and O₂ Plasma

Sarkar

Potts

Rushworth³

et al. 2010

ECS Trans.

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Titanium oxide thin films of both amorphous and anatase morphologies have been deposited using remote plasma ALD over a wide temperature range (100-350 °C), using a novel heteroleptic alkylamido precursor Ti(Cp Me )(NMe 2 ) 3 . A high growth per cycle (GPC) of 0.07-0.08 nm (which is about 50 % higher than the GPC obtained with most other organometallic precursors) without any nucleation delay was observed. Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) studies on the deposited films revealed their stoichiometry and compositional purity: samples deposited at 100-350 °C had [O]/[Ti] ratios of ~2.0 ± 0.1. Samples deposited at 200 °C and above had C, H and N concentrations of less than 0.6, 2 and 2.3 at.%, respectively. Atomic force microscopy (AFM) and X-ray diffraction (XRD) studies revealed that films deposited at 300 °C and above had a significant crystalline (anatase) component, while films deposited at 100 and 200 °C were amorphous.

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Physical properties of ALD-Al2O3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors

Cited by 22 publications

References 7 publications

Densification of Thin Aluminum Oxide Films by Thermal Treatments

Densification of Thin Aluminum Oxide Films by Thermal Treatments

Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor

Plasma-Enhanced ALD of TiO₂ Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(Cp^Me)(NMe₂)₃] and O₂ Plasma

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Physical properties of ALD-Al2O3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors

Cited by 22 publications

References 7 publications

Densification of Thin Aluminum Oxide Films by Thermal Treatments

Densification of Thin Aluminum Oxide Films by Thermal Treatments

Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor

Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma

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About

Plasma-Enhanced ALD of TiO₂ Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(Cp^Me)(NMe₂)₃] and O₂ Plasma