Physical Properties of Amorphous In–Ga–Zn–O Films Deposited at Different Sputtering Pressures

Yasuno, Shinji; Hino, Aya; Morita, Shinya; Hayashi, Kazushi; Kugimiya, Toshihiro

doi:10.7567/jjap.52.03ba01

Cited by 18 publications

(13 citation statements)

References 31 publications

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“…In addition, the S-value of 0.21 V/ decade and Ion/off ratio of 2.63×10 10 were also obviously improved for the device deposited under 1 mTorr. As reported in previous papers [8,9], a significant improvement in device performance was observed for the TFTs utilizing a-IGZO channel deposited at a low pressure of 1 mTorr. They determined the reason for this improvement by physical analysis variation, wherein film density and roughness of the a-IGZO films deposited at different chamber pressures were evaluated.…”

Section: Methodssupporting

confidence: 78%

“…This improvement could be attributed to densification of the a-IGZO film, however information addressing how the densification of the a-IGZO film improved the electrical properties is lacking. Yasuno et al [9] also reported that densification and roughness can be improved at a lower sputtering pressure, which also resulted in improvement saturation mobility (μ sat ) and sub-threshold swing (S.S.). However, there is still a lack of direct electronic structure evidence to support the variation electrical properties.…”

Section: Introductionmentioning

confidence: 97%

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The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

2014

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This paper addresses changes in device performance for GeGaInOx (GGIO) thin film transistors deposited as a function of process pressures, and the mechanisms responsible for electronic band structure and defect states within sub-gap states. As the process pressure decreased from 5 to 1 mTorr during sputtering of the GGIO active layer, the saturation mobility increased from 6.51 to 11.18 cm 2 /Vs and the sub-threshold swing value decreased from 0.64 to 0.21 V/ decade. Conduction band areas measured by x-ray absorption spectroscopy in GGIO films increased as the total process pressure decreased from 5 to 1 mTorr, which can help charge transport in GGIO semiconductors. In addition, the ΔVth shift during positive bias temperature stability for 3 h was also enhanced from 17.5 to 6.2 V. This improvement can be attributed to the reduction of relative near conduction band edge defect states, which was found in not only at the GGIO films level by spectral ellipsometry, but also at the device level by the Meyer-Neldel rule.

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Section: Methodssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 97%

The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

2014

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“…Yasuno et al . 64 and Trinh et al . 65 observed that electrical properties of the film depend on surface roughness and porosity of film.…”

Section: Resultsmentioning

confidence: 94%

Bi0.9Ho0.1FeO3/TiO2 Composite Thin Films: Synthesis and Study of Optical, Electrical and Magnetic Properties

Islam

Zubair

Bashar

et al. 2019

Sci Rep

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A visible light active Bi0.9Ho0.1FeO3 nanoparticles/TiO2 composite thin films with different mol.% of Bi0.9Ho0.1FeO3 were successfully prepared via non-aqueous sol-gel method. The incorporation of 5, 10 and 20 mol.% Bi0.9Ho0.1FeO3 nanoparticles in the precursor solution of TiO2 brings modifications in the functional properties of the composite thin films. XPS analysis indicates that interdiffusion of Fe3+, Ho3+, Bi3+/Ti4+ ions through the interfaces between Bi0.9Ho0.1FeO3 nanoparticles and TiO2 matrix reduces the concentration of Ti3+ ions. X-ray diffraction analysis affirms that TiO2 and Bi0.9Ho0.1FeO3 retain anatase and orthorhombic phase respectively in composite films. The composite thin film containing 20 mol.% Bi0.9Ho0.1FeO3 nanoparticles exhibits the most prominent absorption phenomenon in visible region and has significantly reduced indirect band gap of 2.46 eV compared to that of pure TiO2 (3.4 eV). Hall effect measurements confirm that the resistivity of composite film increases by ∼2.33 orders of magnitude and its carrier concentration decreases by 1.8 orders of magnitude at 5 mol.% Bi0.9Ho0.1FeO3 nanoparticles addition compared to those of pure TiO2 film. Moreover, the pure film exhibits diamagnetism, whereas the composite films have both large ferromagnetic and small diamagnetic components. The findings in this research justify that the composite film can be a potential candidate for making improved photocatalyst, resistors and spintronic devices.

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“…The microwave photoconductivity decay (µ‐PCD) method is known as a nondestructive and contactless technique used for direct evaluation of various semiconductors. [ 24–26 ] It enables characterization of the recombination and trapping processes of photogenerated carriers by observing the microwave reflectivity. Therefore, the peak reflectivity signals of the photoconductivity are correlated with the quality (i.e., the defects) of the film that affects device performance.…”

Section: Resultsmentioning

confidence: 99%

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Liu

Zhang

Shiah

et al. 2021

Adv Materials Inter

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Recently, amorphous oxide semiconductors (AOSs) have attracted much attention owing to their various advantages. The intrinsic nature of AOSs enables to achieve high‐performance thin‐film transistors (TFTs) using low‐temperature process, which would be a strong point for next‐generation flexible electronics. However, most AOS TFTs still require postannealing treatments (>300 °C) for structural relaxation to suppress defects, which lead to the issue of thermal resistance of plastic substrates. Therefore, a strategy for obtaining both low‐temperature process and defect suppression is highly demanded for flexible electronics. To solve the former issue, a Sn–Si–O system is proposed in this paper. It is clarified that Si cations play the roles of amorphousizing SnO2 and suppressing carrier concentration. As a result, room‐temperature fabricable flexible Sn–Si–O TFTs with high mobility and high reliability are demonstrated. It is also suggested that obtaining a rigid film structure is quite important to fabricate high performance TFTs without any further postannealing treatment. The obtained saturation mobility (μsat) and on/off ratio are 7.59 cm2 V−1 s−1 and 1.59 × 107, respectively. This work suggests that amorphous Si doped SnO2 has the potential for the application to the flexible driving backplane in display industry.

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Physical Properties of Amorphous In–Ga–Zn–O Films Deposited at Different Sputtering Pressures

Cited by 18 publications

References 31 publications

The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

Bi0.9Ho0.1FeO3/TiO2 Composite Thin Films: Synthesis and Study of Optical, Electrical and Magnetic Properties

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

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