Physical properties of amorphous InGaZnO4 films doped with Mn

Liu, Shiu Jen; Fang, Hsin-Kai; Su, Shih Hao; Li, Chia Hung; Cherng, J.S.; Hsieh, J.H.; Juang, Jenh‐Yih

doi:10.1063/1.3095505

Cited by 19 publications

(10 citation statements)

References 19 publications

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“…In the present case, all of the a-IGZO thin films were found to be of the n-type. It is noteworthy that the ranges of the electrical property values were similar to those reported by Liu et al 9 The data showed that resistivity (ρ) decreased (from 7.0 × 10 −3 to 4.7 × 10 −3 −cm) but the carrier concentration (n) increased (from 2.6 × 10 19 to 5.0 × 10 19 /cm 3 ) with the increase of the substrate temperature (T s ).…”

Section: Resultssupporting

confidence: 83%

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Effects of Substrate Temperature on Structural, Electrical and Optical Properties of Amorphous In-Ga-Zn-O Thin Films

Thakur

Yoo

Kang

et al. 2012

ECS J. Solid State Sci. Technol.

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We studied the effects of substrate temperature (Ts) on the surface roughness, resistivity (ρ), mobility (μ), charge carrier concentrations (n), transmission and optical bandgap (Eg) of amorphous In-Ga-Zn-O thin films (∼250 nm thickness) deposited by radio-frequency magnetron sputtering. As Ts increased from RT to 300°C, n increased (2.6 × 1019 → 5.0 × 1019 /cm3), ρ decreased (7.0 × 10−3 → 4.7 × 10−3 Ω−cm), and Eg (3.9 → 3.7 eV) along with the average transmission (89 → 82%) in the visible region decreased. Investigation of the O 1s core level and the Ga 3d, In 4d, and Zn 3d shallow-core levels spectra obtained by high-resolution X-ray photoelectron spectroscopy revealed that as Ts increased, an O 1s component representing the oxygen vacancies increased in amount and that the intensity ratio of In/Ga increased but that of Zn/Ga decreased. The analysis suggests that the increase of oxygen vacancies could explain the increase of charge carrier concentration and that the compositional change could explain the change of Eg.

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Section: Resultssupporting

confidence: 83%

“…a-IGZO films are known to be advantageous over other polycrystalline oxide semiconductors in uniformity. 9 I. From the AFM images and RMS roughness values (0.23 ∼ 0.27 nm), we could conclude that the morphology of the thin films was not much affected within the RT ∼ 300 • C substrate temperature range.…”

Section: Resultsmentioning

confidence: 74%

Effects of Substrate Temperature on Structural, Electrical and Optical Properties of Amorphous In-Ga-Zn-O Thin Films

Thakur

Yoo

Kang

et al. 2012

ECS J. Solid State Sci. Technol.

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“…In the present case, all of the a-IGZO thin films were found to be of the n-type. It is noteworthy that the range of electrical values is similar to that reported by Liu et al [21]. The data show that the Hall mobility decreased and the carrier concentration increased as the working pressure increased.…”

Section: Resultssupporting

confidence: 80%

Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films

Thakur¹,

Kang²,

Baik³

et al. 2012

Materials Research Bulletin

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“…Very recently, the experimental results for Mn doped InGaZnO 4 were reported [72]. It was found that the conductivity decreases while the carrier mobility increases with Mn content (up to 2.5 at.% of Mn).…”

Section: V3 Role Of the Dopant's Electronic Configurationmentioning

confidence: 99%

Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation

2010

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The electronic properties of single-and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In2O3, α-and β-Ga2O3, rock salt and wurtzite ZnO, and layered InGaZnO4 reveals the role of the following factors which govern the transport and optical properties of these TCO materials: (i) the crystal symmetry of the oxides, including both the oxygen coordination and the long-range structural anisotropy; (ii) the electronic configuration of the cation(s), specifically, the type of orbital(s) -s, p or d -which form the conduction band; and (iii) the strength of the hybridization between the cation's states and the p-states of the neighboring oxygen atoms. The results not only explain the experimentally observed trends in the electrical conductivity in the single-cation TCO, but also demonstrate that multicomponent oxides may offer a way to overcome the electron localization bottleneck which limits the charge transport in widebandgap main-group metal oxides. Further, the advantages of aliovalent substitutional doping -an alternative route to generate carriers in a TCO host -are outlined based on the electronic band structure calculations of Sn, Ga, Ti and Zr-doped InGaZnO4. We show that the transition metal dopants offer a possibility to improve conductivity without compromising the optical transmittance.

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Physical properties of amorphous InGaZnO4 films doped with Mn

Cited by 19 publications

References 19 publications

Effects of Substrate Temperature on Structural, Electrical and Optical Properties of Amorphous In-Ga-Zn-O Thin Films

Effects of Substrate Temperature on Structural, Electrical and Optical Properties of Amorphous In-Ga-Zn-O Thin Films

Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films

Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation

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