Physical properties of an oxide photoresist film for submicron pattern lithography

Chiang, Donyau; Chang, Cheng-Chi; Chen, Shiwei; Yang, Chin-Tien; Hsueh, Wen–Jeng

doi:10.1016/j.tsf.2013.05.134

Cited by 4 publications

(7 citation statements)

References 23 publications

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“…The sputtered oxide film is amorphous and crystallizes at 474.71 o C as determined by XRD 18 . The trace minimum of the DSC curve corresponds to this crystallization.…”

Section: Thermal Characteristics Of the Oxide Photoresistmentioning

confidence: 99%

“…The trace minimum of the DSC curve corresponds to this crystallization. The crystallized phases are mixture of element Sb, hexagonal GeO 2 and tetrahedral Sn 0.918 Sb 0.109 O 2 , with Sb being the major component in the precipitated crystals 18 .…”

Section: Thermal Characteristics Of the Oxide Photoresistmentioning

confidence: 99%

“…The degree of oxidation is depicted as the extinction coefficient of the oxide photoresist. It is measured and calculated using a spectrophotometer at 405 nm wavelength 18,22 .…”

Section: The Dependence Of Extinction Coefficient Of Oxide Photoresismentioning

confidence: 99%

“…The organic photoresist used in DPCL is SU8 and its process parameters are well-documented 17 . The inorganic photoresist is a metal oxide containing Ge, Sb, O and Sn, but the material properties are only partially understood 18,19 . We report here the thermal properties of the oxide photoresist, the surface morphology of the photoresist structure by the direct laser writing, and the effects of the variables in the ICP-RIE process on PSS etching.…”

Section: Introductionmentioning

confidence: 99%

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Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Chang¹,

Tseng²,

Lee³

et al. 2014

SPIE Proceedings

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Dual photoresist complimentary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the sub-micro pit patterns on a sapphire surface. The oxide photoresist is patterned by the direct laser writing and the developed mark size decreases to a smaller value than the laser spot size due to the thermal lithography. The small developed pit diameter is one of the advantages using oxide photoresist. The oxide photoresist possesses strong etching resistance against the oxygen plasma but shows no resistance against the chlorine plasma. The chlorine plasma is a necessary component to etch the sapphire during the ion-coupled-plasma reactive-ion-etching process because of sapphire's mechanical hardness and chemical stability. However, the characteristics of organic resist SU8 are opposite to that of oxide photoresist and possess moderate resistance against chlorine plasma but show no resistance to oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported here. The dependence of the laser power on the developed mark sizes and morphologies is illustrated by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated. Images of patterned pits on the large commercial sapphire substrates are also shown.

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“…The sputtered oxide film is amorphous and crystallizes at 474.71 o C as determined by XRD 18 . The trace minimum of the DSC curve corresponds to this crystallization.…”

Section: Thermal Characteristics Of the Oxide Photoresistmentioning

confidence: 99%

Section: Thermal Characteristics Of the Oxide Photoresistmentioning

confidence: 99%

“…The degree of oxidation is depicted as the extinction coefficient of the oxide photoresist. It is measured and calculated using a spectrophotometer at 405 nm wavelength 18,22 .…”

Section: The Dependence Of Extinction Coefficient Of Oxide Photoresismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Chang¹,

Tseng²,

Lee³

et al. 2014

SPIE Proceedings

Self Cite

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show abstract

“…1 The resulting PSS size is within 2 to 5 μm because of the optical resolution limitation applied in photolithography. 18,19 We first applied laser writing on the oxide photoresist and developed it to generate the mark array of a diameter less than the laser spot due to thermal lithography. A dual-photoresist complementary lithographic (DPCL) technique with inorganic and organic photoresist combination is proposed to create the submicrometer pattern features on the PSS.…”

Section: Introductionmentioning

confidence: 99%

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

Chang

Tseng

Lee

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Dual-photoresist complementary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the submicron pit array patterns on a sapphire surface. The oxide photoresist is patterned by direct laser writing, and the developed pit size decreases to a smaller value than the laser spot size due to the thermal lithography. The oxide photoresist possesses strong etching resistance against oxygen plasma but shows no resistance against chlorine plasma. During the ion-coupled-plasma reactive-ion-etching process, chlorine plasma is a necessary component to etch the sapphire. Moreover, the characteristics of organic resist are opposite those of oxide photoresist and possess moderate resistance against chlorine plasma but no resistance against oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported in this study. The dependence of laser power on the developed mark sizes and morphologies is examined by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated, and the thermal lithography concept is introduced to explain the effect of power on the developed oxide mark width. Images of patterned pit array on a commercial 4-inch-diameter sapphire substrate are also shown. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/15/2015 Terms of Use: http://spiedl.org/terms

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Realizing multimodal lithography effects by adjusting laser exposure power ranges for TeO_x inorganic photoresist

Liu,

Zhao,

Wang

et al. 2024

Mater. Res. Express

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Suboxide chalcogenide thin films like TeO x are promising inorganic lithography materials. Different from previous reports of single-mode lithography based on TeO x films at low laser power, this study proposes multimodal lithography effects at low, medium, and high laser power ranges. The TeO x films were fabricated by reactive magnetron sputtering, exhibiting super smooth surface with an RMS 0.33 nm. The lithographic performance was researched using a laser direct writing system with a wavelength of 780 nm. The experiment results showed that different kind of lithographic patterns were achieved by changing laser power ranges. At low exposure powers (5 mW to 9 mW), TeO x film transforms from amorphous to crystalline, generating patterns with single-trench since only the crystalline state dissolves in alkaline developers. At medium exposure powers (10 mW to 15 mW), the center of the laser spot that has greater power turns the film from amorphous to crystalline and then back to amorphous due to the rapid quenching process, while the outer region cools slowly to form crystalline, resulting in the patterns with double-trenches, with feature size 119 nm (about 1/7 λ). At high exposure powers (>16 mW), the laser power is capable of ablating the TeO x film, resulting in the ablation and redeposition patterns. Therefore, multimodal lithographic nano-patterns on the same TeO x photoresist film can be realized with only one lithography process by precisely manipulating the laser power ranges, which has significant implications in the fields of nano-manufacturing and optical storage.

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Physical properties of an oxide photoresist film for submicron pattern lithography

Cited by 4 publications

References 23 publications

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

Realizing multimodal lithography effects by adjusting laser exposure power ranges for TeO_x inorganic photoresist

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Physical properties of an oxide photoresist film for submicron pattern lithography

Cited by 4 publications

References 23 publications

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

Realizing multimodal lithography effects by adjusting laser exposure power ranges for TeOx inorganic photoresist

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Realizing multimodal lithography effects by adjusting laser exposure power ranges for TeO_x inorganic photoresist