The thermal transformation of chemically deposited Co 3 S 4 thin films to CoO films by air annealing has been achieved. The decomposition of a 500 nm thick Co 3 S 4 thin film to a CoO film involves the creation of non-stoichiometric Co 3 S 4 , Co 3 S 4 + CoS 2 mixed phase and non-stoichiometric CoO, as confirmed from x-ray diffraction patterns, energy-dispersive analysis of x-ray fluorescence data and optical and electrical characteristics. The 270 • C air-annealed films exhibited the lowest sheet resistance of about 10 7 / and an electrical conductivity activation energy (E σ ) of 0.35 eV in the temperature range from room temperature to 150 • C. A temperature of 310 • C was established as the transition temperature for the conversion of the Co 3 S 4 + CoS 2 mixed phase to the non-stoichiometric CoO. Air annealing of the films for 1 h at temperatures in the 350-400 • C range converted them to nearly stoichiometric CoO films with an increase in the sheet resistance to about 10 10 / . The E σ value also increased to 1.05 eV. The absorption coefficient data on the films are interpreted in terms of direct and indirect band-to-band transitions.