Physical properties of gallium and aluminium co-doped zinc oxide thin films deposited at different radio frequency magnetron sputtering power

Muchuweni, Edigar; Sathiaraj, T.S.; Nyakotyo, H.

doi:10.1016/j.ceramint.2016.08.091

Cited by 35 publications

(11 citation statements)

References 34 publications

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“…In this regard, transparent conducting zinc oxide (ZnO) is extremely an attractive replacement material for ITO due to its good optical and electrical properties coupled with the low cost, non-toxicity and abundance in nature of Zn [6]. ZnO is an n-type semiconductor material with a direct wide band gap energy (3.37 eV) and large exciton binding energy (60 meV) at room temperature [7].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Muchuweni

Sathiaraj

Nyakotyo

2017

Heliyon

Self Cite

210

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Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain orientation. The mean crystallite size calculated on the basis of the Debye-Scherrer model was 24 nm and a small dislocation density of 1.7×10−3 nm−2 was obtained, indicating the existence of few lattice defects and good crystallinity. Scanning Electron Microscopy (SEM) micrographs revealed the film’s granular nature composed of rod-shaped and spherical nanoparticles which agglomerated to form micro-ring like film clusters on the film surface. The average transmittance in the visible region, optical band gap and Urbach energy were approximately 75–80%, 3.28 eV and 57 meV, respectively. The refractive index and extinction coefficient were determined using Swanepoel’s envelope method. Raman spectroscopy revealed the presence of small amounts of residual tensile stress and low density of defects in the ZnO thin films. This was consistent with XRD analysis. A low sheet resistivity (6.03×101 normalΩcm) and high figure of merit (4.35×10−6 Ω−1) were obtained for our films indicating their suitability in optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Muchuweni

Sathiaraj

Nyakotyo

2017

Heliyon

Self Cite

210

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“…Moreover, the treatment of contaminated water with dyes and other organic compounds, photocatalysis based on nano-sized semiconductor photocatalysts is a recently emerging clean and cost-effective and elegant alternative for the treatment of water contaminated with dyes and other organic compounds [2]. The high photocatalytic performance of metal-oxide semiconductors, like titanium dioxide (TiO2) and zinc oxide (ZnO), not only benefits from utilizing the high photosensitivity of these materials, but also their non-toxic nature, low cost, and eco-friendly nature [1].…”

Section: Introductionmentioning

confidence: 99%

Influence of magnesium doping on microstructure, optical and photocatalytic activity of zinc oxide thin films synthesis by sol–gel route

et al. 2021

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The article deals with the effect of Mg dopant on the properties and the photocatalytic of ZnO films synthesized by the sol-gel technique onto glass substrates. It is found that Mg dopant has a strong influence on the microstructure and functional properties.The EDX analysis revealed that Mg had been incorporated into the ZnO. Structural studies through XRD have shown that the deposited films are of hexagonal structure with a preferential growth along the c-axis and nanometer crystal size. According to AFM analysis; it is found that the roughness of Mg-doped ZnO films increases with the Mg dopant. The film surface depicted wrinkles morphology as observed by ESEM. Optical investigations by spectrophotometry and photoluminescence revealed that as the Mg dopant is increased, the optical band-gap increases. Moreover, near band edge and visible emissions as probed by Photoluminescence can be manipulated by the Mg dopant, as their intensity increases and decreases, respectively. Finally, the photocatalytic activity for degradation of methylene blue is strongly improved all the more as the Mg content is increased.

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“…Meanwhile, the diameter increased greatly with solution concentration. Finally, well-aligned ZnO NWs were grown at the optimized growth temperature of 90 • and solution concentration of 25 mM for 2 h. The ZnO NWs fabricated by using GAZO thin films seed layers showed greater advantages than the undoped ZnO, GZO, and AZO thin films seed layers-based ZnO NWs [88], [89].…”

Section: B Hydrothermal Synthesis Methodsmentioning

confidence: 99%

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Xiu-sheng

Liu

et al. 2021

IEEE Access

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Ultraviolet photodetectors have attracted significant research attention in recent years due to their potential applications in civilian and military fields. ZnO nanowires and nanorods have been regarded as the most potential candidates for ultraviolet photodetectors fabrication because of their peculiar characteristics and size effect, which are different from their bulk material. Recently, many novel routes and semiconductor features, such as the surface and interface engineering, the pryo-phototronic effect, the piezo-phototronic effect, the surface plasmon effect and the surface functionalization have been utilized to improve the photoelectric characteristics of ultraviolet photodetectors. Thus, the working mechanism of these effects existing in ZnO nanowires/nanorods-based ultraviolet photodetectors should be investigated in-depth. In this paper, firstly, the hydrothermal method and the chemical vapor deposition method, as two typical synthesis methods of ZnO nanowires are briefly reviewed. Secondly, we focus on reviewing the properties of varied ZnO nanowires/nanorods-based ultraviolet photodetectors constructed using the above mentioned semiconductor features with metal-semiconductor-metal structure, Schottky barrier structure, vertical p-n heterojunction structure and core-shell heterostructure. Furthermore, the most attractive self-powered ultraviolet photodetectors are systematically reviewed. For various ZnO nanowires/nanorods-based ultraviolet photodetectors, we put the emphasis on the working mechanism of semiconductor features to improve the properties of the photodetectors. Finally, we give an outlook on the future development of ZnO nanowires/nanorods-based ultraviolet photodetectors.

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Physical properties of gallium and aluminium co-doped zinc oxide thin films deposited at different radio frequency magnetron sputtering power

Cited by 35 publications

References 34 publications

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Synthesis and characterization of zinc oxide thin films for optoelectronic applications

Influence of magnesium doping on microstructure, optical and photocatalytic activity of zinc oxide thin films synthesis by sol–gel route

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

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