Physical properties of high pressure reactively sputtered hafnium oxide

Toledano-Luque, M.; Martínez, Francisco; Andrés, E. San; Prado, A. del; Mártil, I.; González-Dı́az, G.; Bohne, W.; Röhrich, J.; Strub, Erik

doi:10.1016/j.vacuum.2008.03.083

Cited by 13 publications

(6 citation statements)

References 25 publications

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“…Additionally it is observed that the nanocrystals are randomly oriented, with no preferential growth direction which is in agreement with GIXRD measurements. This is in contrast with previous HfO 2 results obtained with the same system, 28 which showed a columnar growth. Finally, close to the interface the nanocrystals are not so clearly observed, suggesting an amorphous initial growth stage.…”

Section: Resultscontrasting

confidence: 99%

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Feijoo

Prado

Toledano-Luque

et al. 2010

Journal of Applied Physics

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Scandium oxide (ScOx) thin layers are deposited by high-pressure sputtering (HPS) for physical and electrical characterization. Different substrates are used for comparison of several ScOx/Si interfaces. These substrates are chemical silicon oxide (SiOx), H-terminated silicon surface and silicon nitride (SiNx), obtained by either electron-cyclotron-resonance chemical vapor deposition or plasma enhanced nitridation of the Si surface. Transmission electron microscopy images show that a 1.7 nm thick SiOx layer grows when ScOx is deposited on H-terminated silicon surface. We demonstrate that interfacial SiNx has some advantages over SiOx used in this work: its permittivity is higher and it presents better interface quality. It also avoids Si oxidation. An improvement of one order of magnitude in the minimum of interface trap density is found for SiNx with respect to the SiOx, reaching values below 2×1011 cm−2 eV−1. HPS deposited ScOx films are polycrystalline with no preferential growth direction for the used deposition conditions and their properties do not depend on the substrate. This material could be a candidate for high-k material in flash memory applications.

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Section: Resultscontrasting

confidence: 99%

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Feijoo

Prado

Toledano-Luque

et al. 2010

Journal of Applied Physics

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“…Recently, HfO 2 has been proposed as a replacement since it has a large bandgap (E g > 5 eV) as well as high dielectric value of ∼25 and thermodynamically stable when grown on Si [3,4]. Moreover, having high refractive index value and good transmission characteristics in the visible spectrum range, HfO 2 has been of interest for antireflective multilayer coating technology [5,6]. Another important aspect of this novel material is its application on thermal barrier coatings for turbine blades operating in harsh and high temperature ambient due to its high melting temperature (∼2800 • C) and thermal stability [7].…”

Section: Introductionmentioning

confidence: 99%

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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a b s t r a c tHigh-hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and highfilm, prior to HfO 2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O 2 /Ar gas mixture was studied for the optical and structural properties of grown HfO 2 high-thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO 2 dielectric film, while increments in SiO 2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O 2 /Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power.

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“…In the first set of samples that will be presented, the stoichiometric GdScO 3 target was used. In all experiments with oxide targets the sputtering atmosphere used was pure Ar, since previous results showed that the oxygen from the target was enough to produce stoichiometric films (18,19). The substrate holder temperature was 200ºC, the chamber pressure was 1.0 mbar and the rf power 40 W.…”

Section: Methodsmentioning

confidence: 99%

(Invited) High Pressure Sputtering for High-K Dielectric Deposition. Is It Worth Trying

et al. 2014

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Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate deposited from dielectric targets, and gadolinium oxide deposited from a metallic target, with an in situ plasma oxidation. The stoichiometric gadolinium scandate presents a slight permittivity boost after annealing, but with gadolinium-rich scandate (grown with an annealing of a nanolaminate) the dielectric shows a high effective permittivity of 21 and no noticeable SiO2 layer at the interface with Si. On the other hand, the stacks fabricated with the metallic Gd target have a SiO2 interface less than 0.7 nm thick that can be further reduced by scavenging with Ti gates. In fact, this scavenging effect is also demonstrated for the first time with indium phosphide substrates, obtaining a low capacitance equivalent thickness of only 2.1 nm.

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Physical properties of high pressure reactively sputtered hafnium oxide

Cited by 13 publications

References 25 publications

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

(Invited) High Pressure Sputtering for High-K Dielectric Deposition. Is It Worth Trying

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