Physical properties of multiferroic hexagonal HoMnO3 thin films

Murugavel, P.; Lee, J.-H.; Lee, Dooyong; Noh, T. W.; Jo, Younghun; Jung, Myung‐Hwa; Oh, Yoon Seok; Kim, Kee Hoon

doi:10.1063/1.2718512

Cited by 48 publications

(50 citation statements)

References 15 publications

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“…This prediction agrees well with the earlier XRD studies of the thin films. [21,22] For a larger ionic radius (R = Tb and Dy), since in bulk form they are in the orthorhombic phase, we cannot directly compare the lattice parameters between thin films and single crystals. While our results predict that if RMnO 3 (R = Tb and Dy) form single crystals, the lattice constant a of the thin films would be smaller than that of single crystals, i.e.…”

Section: Resultsmentioning

confidence: 99%

Raman scattering studies of hexagonal rare‐earth RMnO₃ (R = Tb, Dy, Ho, Er) thin films

Hiền

Chen

et al. 2011

J Raman Spectroscopy

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We have studied the rare-earth (R) dependence of the phonon and magnon scattering in hexagonal RMnO 3 (R = Tb, Dy, Ho, Er) thin films using Raman scattering spectroscopy. We found, as the ionic radius of R decreases from Tb to Er, the phonons shift to higher energies. Our results indicate that both the lattice constants a and c of hexagonal RMnO 3 would decrease when the ionic radius of R decreases, and the lattice constant c would have a weaker R dependence. The magnons also shift to higher energies when the radius of the R ion decreases, and they show faster upshift than the phonons. In addition, the Néel temperature also shows a systematic increasing behavior when the radius of the R ion decreases. The dependence of the rare-earth R on the magnons and the Néel temperature can be explained by the rapid increase of the spin-exchange integral when the Mn-Mn distance decreases.

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Section: Resultsmentioning

confidence: 99%

Raman scattering studies of hexagonal rare‐earth RMnO₃ (R = Tb, Dy, Ho, Er) thin films

Hiền

Chen

et al. 2011

J Raman Spectroscopy

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“…More details about the growth conditions and structural characterization of the thin films have been reported elsewhere. 12,[15][16][17] Transmittance optical measurements were performed in the photon energy range of 0.1-6.0 eV. We used an FT-IR spectrometer (Bruker IFS66v/S) and a grating-type spectrophotometer (CARY 5G) in the photon energy region of 0.1-1.2 eV and 0.4-6.0 eV, respectively.…”

Section: Experimental Methodsmentioning

confidence: 99%

Optical spectroscopic investigation on the coupling of electronic and magnetic structure in multiferroic hexagonalRMnO3(R=Gd, Tb, Dy, and Ho) t

et al. 2008

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We investigated the effects of temperature and magnetic field on the electronic structure of hexagonal RMnO 3 (R = Gd, Tb, Dy, and Ho) thin films using optical spectroscopy. As the magnetic ordering of the system was disturbed, a systematic change in the electronic structure was commonly identified in this series. The optical absorption peak near 1.7 eV showed an unexpectedly large shift of more than 150 meV from 300 K to 15 K, accompanied by an anomaly of the shift at the Néel temperature. The magnetic field dependent measurement clearly revealed a sizable shift of the corresponding peak when a high magnetic field was applied. Our findings indicated strong coupling between the magnetic ordering and the electronic structure in the multiferroic hexagonal RMnO 3 compounds. PACS number(s): 78.20.Ci, 78.66.Nk, 77.90.+k,

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“…Lastly, it should be noted that these effects should be more important for ferroelectric materials with high T C values, such as HoMnO 3 [48], BiFeO 3 [49] and highly strained ferroelectric films [22]. D defect forms as a result of the migration of charged point defects, which dominates at high temperatures.…”

Section: (C) Polarization Hysteresis Loopsmentioning

confidence: 99%

Giant flexoelectric effect through interfacial strain relaxation

Lee

Noh

2012

Phil. Trans. R. Soc. A.

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Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

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Physical properties of multiferroic hexagonal HoMnO3 thin films

Cited by 48 publications

References 15 publications

Raman scattering studies of hexagonal rare‐earth RMnO₃ (R = Tb, Dy, Ho, Er) thin films

Raman scattering studies of hexagonal rare‐earth RMnO₃ (R = Tb, Dy, Ho, Er) thin films

Optical spectroscopic investigation on the coupling of electronic and magnetic structure in multiferroic hexagonalRMnO3(R=Gd, Tb, Dy, and Ho) t

Giant flexoelectric effect through interfacial strain relaxation

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Physical properties of multiferroic hexagonal HoMnO3 thin films

Cited by 48 publications

References 15 publications

Raman scattering studies of hexagonal rare‐earth RMnO3 (R = Tb, Dy, Ho, Er) thin films

Raman scattering studies of hexagonal rare‐earth RMnO3 (R = Tb, Dy, Ho, Er) thin films

Optical spectroscopic investigation on the coupling of electronic and magnetic structure in multiferroic hexagonalRMnO3(R=Gd, Tb, Dy, and Ho) t

Giant flexoelectric effect through interfacial strain relaxation

Contact Info

Product

Resources

About

Raman scattering studies of hexagonal rare‐earth RMnO₃ (R = Tb, Dy, Ho, Er) thin films

Raman scattering studies of hexagonal rare‐earth RMnO₃ (R = Tb, Dy, Ho, Er) thin films