Herein, structural, electronic, and optical characteristics of pristine Sb 2 O 3 and doped Sb 2Àx M x O 3 (M = Cu, Ni, Zn; x = 0.25) for optoelectronic and allied applications are computed using Tran-Blaha modified Becke-Johnson (TB-mBJ) approximation along with Hubbard correction. The calculated negative groundstate energy values and absence of imaginary frequency at Gamma (ΓÞpoint predict the dynamical and structural stability of all studied composites. The spinpolarized electronic band structure, density of states (DOS), and 3D iso-surface charge density analysis show reduced energy bandgap values for Sb 2Àx M x O 3 with dopant at site B. In addition, Sb 2Àx Ni x O 3 is found with minimal energy bandgap along spin-down configuration. As regards optical response of composites, Sb 2Àx Ni x O 3 offers maximum electromagnetic absorption in UV region and highest optical conductivity. Henceforth, Sb 2Àx Ni x O 3 is found as most promising candidate among all studied composites for optoelectronic and allied applications.