Physical Properties of Silver Doped ZnSe Thin Films for Photovoltaic Applications

Abstract

Closed space sublimation (CSS) technique was used to deposit pure (99.99%) zinc selenide(ZnSe) powder on to glass substrates for fabricating the ZnSe thin films. The temperatures of source, substrate and the deposition time were optimized to deposit thin films of different thicknesses. Silver (Ag) was used as a dopant by ion exchange process in the ZnSe thin films. The structural analysis showed that as-deposited ZnSe thin films were polycrystalline having preferred orientation [111] direction. Micro structural parameters such as crystallite size, lattice parameter were determined using X-rays diffraction (XRD). Grains boundaries, roughness on surface and the grain density of the thin film samples were measured by scanning electron and atomic force microscopy before and after Ag doping.As-deposited, Ag-doped ZnSe samples before and after annealing were optically characterized by spectrophotometer in ultra violet, visible and infrared regions. The energy band gap of as-deposited ZnSe thin films for varying thicknesses were ranging from 2.62-2.67 eV which was reduced after Ag doping.The electrical properties showed that as-deposited thin films were highly resistive of the order of 10 -cm and after Ag immersion, it was reduced to 1 -cm. Deposition parameters and Ag doping 8 influenced the structural, surface, optical and electrical properties.

PHYSICAL PROPERTIES OF SUBLIMATED TERNARY COMPOUND CdZnS THIN FILMS

“…Closed space sublimation (CSS) system unit was used for the preparation of films. The information about the CSS technique used in this work has been well documented before [7][8][9][10][11][12][13][14][15][16][17]. CdZnS powder was taken as a source material.…”

Comparative Assessment of Optical and Solid-State Characteristics in Antimony-Doped Chalcogenide Thin Films of ZnSe and PbSe to Boost Photovoltaic Performance in Solar Cells

“…In simpler terms, it represents the energy needed for an electron to shift from the valence band to the conduction band. The shape of the absorption spectrum and the dispersion near the fundamental absorption edge stem from electron transitions between the upper portion of the valence band and the lower part of the conduction band (Rahman, 2014, Yao et al, 2019, Nazar, 2014. These electron transitions can be categorized as direct or indirect.…”

“…Through meticulous control of antimony doping levels, the optical and solid-state attributes of ZnSe and PbSe thin films can be precisely tailored to optimize their function as absorber layers in solar cells. ZnSe is a preferred material for lenses (Nazar, 2014, Amrillah et al, 2023, and Chatterjee et al, 2022, window layers and output couplers for its low absorptive at infra-red wavelengths and its visible transmission (Amrillah et al, 2023, Chatterjee et al, 2022. Nano based zinc selenide thin films with a wide direct band gap (3.87) has a high transmittance in the visible region having great interest in practical applications in optoelectronics and photonic (Christian et al, 2022, Nazar, 2014.…”

“…ZnSe is a preferred material for lenses (Nazar, 2014, Amrillah et al, 2023, and Chatterjee et al, 2022, window layers and output couplers for its low absorptive at infra-red wavelengths and its visible transmission (Amrillah et al, 2023, Chatterjee et al, 2022. Nano based zinc selenide thin films with a wide direct band gap (3.87) has a high transmittance in the visible region having great interest in practical applications in optoelectronics and photonic (Christian et al, 2022, Nazar, 2014. Antimony-doped thin films of ZnSe and PbSe can be deposited using a variety of methods, including thermal evaporation, self assembly technique, spray pyrolysis, electron beam evaporation, and solution growth technique.etc (Tiwari, 2012, Nazar, 2014.…”

“…Nano based zinc selenide thin films with a wide direct band gap (3.87) has a high transmittance in the visible region having great interest in practical applications in optoelectronics and photonic (Christian et al, 2022, Nazar, 2014. Antimony-doped thin films of ZnSe and PbSe can be deposited using a variety of methods, including thermal evaporation, self assembly technique, spray pyrolysis, electron beam evaporation, and solution growth technique.etc (Tiwari, 2012, Nazar, 2014. This research's primary objective is to conduct a comprehensive comparative analysis of the optical and solid-state characteristics of antimony-doped chalcogenide thin films, focusing on ZnSe and PbSe, to facilitate heightened solar cell efficiency.…”