2015
DOI: 10.1039/c5nj01582k
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Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

Abstract: Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

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Cited by 53 publications
(24 citation statements)
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“…This may be due to an enhancement of internal microstrain with decrease in crystallite size of the lms. 37 Dislocation density, number of crystallites and texture coefficient decrease with increase in ion uence due to increase in grain size. Fault probability shows irregular variation rst decrease, then increase and then again decrease.…”
Section: Structural Studiesmentioning
confidence: 97%
“…This may be due to an enhancement of internal microstrain with decrease in crystallite size of the lms. 37 Dislocation density, number of crystallites and texture coefficient decrease with increase in ion uence due to increase in grain size. Fault probability shows irregular variation rst decrease, then increase and then again decrease.…”
Section: Structural Studiesmentioning
confidence: 97%
“…Figure 3a,b present electron affinities [9,17,[32][33][34][35][36][37][38][39][40][41][42][43][44] and band gap [33,35,36,38,43,[45][46][47][48][49][50][51][52][53][54][55] of typical oxides that have been used in the design and fabrication of MIM diodes. Full details are listed in Table 1 for completeness.…”
Section: Introductionmentioning
confidence: 99%
“…By considering the active area ( A ), the thickness of each dielectric layer ( d blend , d V 2 O 5 , and d TiO 2 ), and its relative dielectric permittivities (ε blend , ε V 2 O 5 , and ε TiO 2 ) through the relationwhere ε 0 is the vacuum dielectric permittivity, the capacitance of the layer can be obtained. The used values of thickness, relative dielectric permittivities (with the source reference in superscripts 3,18,19 ), and the corresponding capacitance are specified in Table S2. By comparing the obtained values with the results obtained from the experimental data analysis, the higher capacitance range can be related to the TiO 2 layer, the medium capacitance range can be related to the V 2 O 5 layer, and the lower capacitance can be related to the active layer (blend).…”
Section: Resultsmentioning
confidence: 99%
“…These values are in the range of those reported by other groups for TiO 2 22 and blend 23 and are 2 orders of magnitude with respect to V 2 O 5 obtained by electron beam evaporation. 19…”
Section: Resultsmentioning
confidence: 99%