Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs

Zhu, C.L.; Rusli, E.; Almira, J.; Tin, C. C.; Yoon, S.F.; Ahn, J.

doi:10.4028/0-87849-963-6.849

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2017

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“…A temperature of 300[K] is employed by default in simulations. By using those most recently published for 4H-SiC that provided the best agreement with the experimental date [12][13]. So, by the comparisons of experiment results as a calibration results, the simulation results could be verified in the UUSC structure.…”

Section: Device Structurementioning

confidence: 72%

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Jia¹,

Luo²,

Ma³

2017

dtcse

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Abstract. An improved ultrahigh upper gate 4H-SiC MESFET (UU-MESFET) with serpentine channel structure (UUSC-MESFET) was proposed. With the implement of the serpentine channel, the channel electric field and the gate depletion layer have been more modulated compared with the UU-MESFET. The simulations show that the breakdown voltage and the drain saturation current of UUSC-MESFET are improved by 13.6%, 12% than those of UU-MESFET and by 44.5%, 23% than those of the double-recessed structure (DR-MESFET). By introducing a recessed channel layer, the proposed structure has an improvement of 27.3%, 81.3% in the out maximum power density compared with that of the UU-MESFET and DR-MESFET, respectively. In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics. Therefore the proposed structure has a superior electrical characteristic and performance.

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Section: Device Structurementioning

confidence: 72%