Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

Talbo, V.; Galdin‐Retailleau, S.; Valentin, Audrey; Dollfus, Philippe

doi:10.1109/ted.2011.2161611

Cited by 14 publications

(15 citation statements)

References 24 publications

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“…The resulting I d -V gs characteristics with coulomb oscillations are consistent with experimental results [3]. The shape of the conductance peak is mainly determined by temperature dependent distribution of electrons in quantum dot.…”

Section: Resultssupporting

confidence: 87%

“…The tunneling rates from source to dot and dot to drain are calculated using Fermi Golden Rule [3]. The Fermi Golden Rule approximates the sum by an integral with respect to energy.…”

Section: Tunneling Rates and Drain Current Calculationmentioning

confidence: 99%

“…A 3D simulator of semiconducting nano crystal based single electron transistor is presented. The analysis is based on the self consistent solution of Poisson and Schrodinger Equations [3]. The quantum dots are modulated using a quantizer block in order to correlate the signal quantified to the energy levels, also introduced a clock, to get different starting time for the island event [4].…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Tunnelling Rate Effect on Single Electron Transistor

Sheela¹,

Balamurugan²,

Sudha³

et al. 2014

Journal of Electrical Engineering and Technology

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-This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

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Section: Resultssupporting

confidence: 87%

“…The tunneling rates from source to dot and dot to drain are calculated using Fermi Golden Rule [3]. The Fermi Golden Rule approximates the sum by an integral with respect to energy.…”

Section: Tunneling Rates and Drain Current Calculationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of Tunnelling Rate Effect on Single Electron Transistor

Sheela¹,

Balamurugan²,

Sudha³

et al. 2014

Journal of Electrical Engineering and Technology

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“…To simulate accurately the electronic structure of a Si QD in an SED, and then their electronic characteristics, we use the homemade 3D self-consistent code SENS (Single-Electron Nanodevices Simulation), initially developed for Si QD-based double-tunnel junctions (DTJs) [12], then extended to doubledot structures by introducing phonon contribution [13] and SETs by including the effect of a gate [14]. In this work, we simulate a DTJ, schematized in Fig.…”

Section: Introductionmentioning

confidence: 99%

Time-dependent physics of double-tunnel junctions

Talbo

Matéos

Retailleau

et al. 2015

2015 10th Spanish Conference on Electron Devices (CDE)

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Abstract-In this work, we investigate and explain the timedependent behavior of shot noise in Silicon quantum dot-based double-tunnel junctions by means of a three-dimensional selfconsistent simulation and a Monte-Carlo algorithm following the time evolution of the system. We demonstrate the strong link between autocorrelation functions and electron waiting time distributions, i.e, the time between two consecutive tunnel events through a given junction. Moreover, we separate and analyze the contribution of each different path -evolution of the number of electrons in the quantum dot between two consecutive tunnel events through the same junction -to understand clearly the behavior of auto-correlations and waiting time distributions in the case of a 3-state system.

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“…The home-made simulator SENS (Single-Electron Nanodevices Simulation) has been used previously to analyze the behavior of Si quantum dot (QD)-based double-tunnel junctions (DTJs) [2] and single-electron transistors (SETs) [3]. It consists in the self-consistent solution of 3D PoissonSchrödinger equations, depending on the bias and number of electrons in the dot.…”

Section: Introductionmentioning

confidence: 99%