Physical vapor deposition of Bi2S3 as absorber material in thin film photovoltaics

Haaf, Sebastian ten; Sträter, Hendrik; Brüggemann, R.; Bauer, G.H.; Felser, Claudia; Jakob, G.

doi:10.1016/j.tsf.2012.11.089

Cited by 41 publications

(17 citation statements)

References 17 publications

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“…Despite the presence of nanopores, 100% relative density has been considered when measuring the electrical conductivity, as this represents the lower bound for electrical conductivity values. The electrical conductivity at room temperature was found to be 6 S m –1 , which is higher than reports for other chemically grown films via chemical deposition , and dip-coating as well as previous reports for physically grown films using thermal evaporation, which typically report an electrical conductivity only as large as 0.1 S m –1 . Hence, our values are 60 times higher due to the novel solution-processable and postprocessing techniques, in addition to having the potential to be compatible to on-chip technologies at the nanoscale.…”

Section: Results and Discussioncontrasting

confidence: 69%

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

Recatala-Gomez

Kumar

et al. 2020

ACS Appl. Mater. Interfaces

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Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single source, spin coatable, and electron beam sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which 23 sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce 24 an electron-rich thermoelectric material. We report a room temperature electrical conductivity of 25 6 S m -1 and a Seebeck coefficient of -21.41 µV K -1 for a directly patterned, sub-stoichiometric 26 Bi2S3 thin film. We expect that our demonstration of directly-writable thermoelectric films, with further optimization of structure and morphology can be useful for on-chip applications.

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Section: Results and Discussioncontrasting

confidence: 69%

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

Recatala-Gomez

Kumar

et al. 2020

ACS Appl. Mater. Interfaces

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“…Optical transmission measurements were evaluated also for thickness determination and resulted in consistent values. A full description of the preparation process and the structural and electrical properties of similar films can be found in separate publications .…”

Section: Methodsmentioning

confidence: 99%

“…So far,

{Bi}_{2} S_{3}

solar cells with either PbS or c‐Si () as p‐type layer lack efficiencies and have a rather low open‐circuit voltage

V_{oc} < 500

meV compared to the band gap, indicating a loss of conversion efficiency either due to recombination via defects in the

{Bi}_{2} S_{3}

bulk or at the interfaces in the solar cell. It has been shown that

{Bi}_{2} S_{3}

can aggregate to nanowires, rods, flakes and flower‐like formations of stoichiometric

{Bi}_{2} S_{3}

and that the occurrence and shape depends on the substrate temperature during deposition, the deposition method or the layer thickness . Some attention has been paid to the intentional fabrication of ordered

{Bi}_{2} S_{3}

nanowires for an increased absorption of photons or for use as optical switches ().…”

Section: Introductionmentioning

confidence: 99%

Detailed photoluminescence study of vapor deposited films of different surface morphology

Sträter

Haaf

Brüggemann

et al. 2014

Physica Status Solidi (b)

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authorenWe present a temperature‐ and intensity‐dependent photoluminescence (PL) study of the binary semiconductor Bi2S3 on the mm‐scale and a laterally resolved PL measurement with a resolution of x≈900nm. The films can show a rather rough surface with needles and flakes of Bi2S3 with different orientations as well as very flat and smooth surface morphology. Despite a band gap of Eg≈1.3eV the films show a splitting of quasi‐Fermi levels (QFL) of μ≈700meV at room temperature. By means of temperature‐dependent PL we have located several radiative and non‐radiative defect states in the band gap. For a better understanding of this thin film semiconductor a full analysis of the laterally resolved PL measurement including the integrated PL yield, energetic position of the PL maximum, optical band gap, splitting of quasi‐Fermi levels and defect absorption of both sample morphologies is presented to avoid misinterpretation of experimental data.

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“…Bismuth sulfide (Bi 2 S 3 ) possesses an optical band gap between 1.3-1.6 eV, [276][277][278] strong optical absorption, and low toxicity, making it an attractive candidate for photovoltaics (Fig. 7.1).…”

Section: Bismuth Sulfidementioning

confidence: 99%

Atomic-Scale Insights into Emergent Photovoltaic Absorbers

Ganose¹

2020

Springer Theses

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I owe a huge debt of gratitude to my supervisor Dr David Scanlon -initially for taking the risk of hiring an organic chemist, and subsequently for his generous advice and support throughout the last four years. I feel incredibly fortunate to have had the opportunity of his mentorship. I would like to thank all members of the Scanlon Materials Theory Group. In particular, special thanks go to Chris Savory for being the font of all learning, Dr Ben Williamson for his discerning taste in figures, Dr Katie Inzani for her knowledge of pre-1990s music, and Dr Adam Jackson for many in-depth discussions. Additional thanks go to the long-lost members of KLB room 349, including Dougal, Ian, Mia, and Rachel, for the constant supply of beer and conversation.Prof. Aron Walsh and many of his current/ex-group members, including Jarvist, John, Keith, Dan, Chris, Suzy, and Lucy have been excellent fun at conferences and never stopped answering my Slack questions. Particular thanks go to Prof. Jamie Neilson and Annalise Maughan at CSU for making my visit so enjoyable. Prof. Brent Melot, Prof. Louis Piper, Dr Anna Regoutz, and Dr Ben Morgan deserve thanks for the number of drinks they have bought me at conferences.

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Physical vapor deposition of Bi2S3 as absorber material in thin film photovoltaics

Cited by 41 publications

References 17 publications

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

Detailed photoluminescence study of vapor deposited films of different surface morphology

Atomic-Scale Insights into Emergent Photovoltaic Absorbers

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