Physicochemical Properties of SnTe Thin Films Dependent on Compositional Ratios

Yoon, Hee-Seung; Lee, Jihyeon; Park, Juyun; Oh, Jin‐Woo; Kang, Yong‐Cheol

doi:10.1002/pssa.202200059

Cited by 3 publications

(7 citation statements)

References 61 publications

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“…The WF was calculated substituting the secondary cutoff (SC) value and Fermi energy in the following equation. [ 55–57 ]

$$\text{WF = 21} \text{.2 eV } \left(\right. \text{He I} \left.\right) \text{ – } \left(\right.

…”

Section: Resultsmentioning

confidence: 99%

“…The WF was calculated substituting the secondary cutoff (SC) value and Fermi energy in the following equation. [55][56][57] WF ¼ 21.2 eV ðHe IÞ -ðFermi level -SCÞ…”

Section: Methodsmentioning

confidence: 99%

“…All Mo x Se y TFs showed similar WF tendency as MoSe 2 .The inset in Figure9shows the UPS spectra of MoSe 2 TF annealed at 500 °C. The WF was calculated substituting the secondary cutoff (SC) value and Fermi energy in the following equation [55][56][57].…”

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confidence: 99%

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Annealing Temperature Effect on the Surface Properties of the MoSe Thin Films

Choi,

Park,

Kang

et al. 2023

Physica Status Solidi (a)

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Two‐dimensional transition metal dichalcogenides have been studied extensively in the field of electronics and photonics. Among them, the molybdenum chalcogenides have been receiving considerable attention due to their potential usage in field effect transistors and biosensors. Despite such promising aspects of these materials, studies regarding temperature effects on MoSe remain relatively rare. In this paper, MoxSey (x = 0∽10, y = 0∽2) thin films were fabricated by radio frequency (RF) magnetron co‐sputtering on silicon substrates and investigated using scanning electron microscopy for various atomic ratios and annealing temperatures ranging from room temperature to 500 oC. Above the melting point of Se (217 oC), Se particles evaporated and formed a layer subsequently leading Mo particles to be exposed on the surface of the thin films. From the X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS) results, silicon peaks from the substrate were observed due to the evaporation of Se particles. In addition, both Mo and Se were oxidized at temperatures above 300 oC. The work function (WF) of the MoxSey thin films showed the highest value at 200 oC, which was measured by ultra‐violet photoelectron spectroscopy (UPS) and a Kelvin probe. Above the melting point of Se, there was a tendency for the work function to decrease due to the influence of Mo.This article is protected by copyright. All rights reserved.

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“…The WF was calculated substituting the secondary cutoff (SC) value and Fermi energy in the following equation. [ 55–57 ]

$$\text{WF = 21} \text{.2 eV } \left(\right. \text{He I} \left.\right) \text{ – } \left(\right.

…”

Section: Resultsmentioning

confidence: 99%

“…The WF was calculated substituting the secondary cutoff (SC) value and Fermi energy in the following equation. [55][56][57] WF ¼ 21.2 eV ðHe IÞ -ðFermi level -SCÞ…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Annealing Temperature Effect on the Surface Properties of the MoSe Thin Films

Choi,

Park,

Kang

et al. 2023

Physica Status Solidi (a)

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“…Due to the immense variation in parameters for fabricating TFs, the resulting physicochemical properties of the TFs are also heavily influenced by various factors, such as RF power on the sputtering target, the thickness of the TFs, and the compositional ratios of TFs 25–27 . However, research regarding the physicochemical properties of TFs fabricated with various ratios of Mo and Te at room temperature is rare.…”

Section: Introductionmentioning

confidence: 99%

“…influenced by various factors, such as RF power on the sputtering target, the thickness of the TFs, and the compositional ratios of TFs. [25][26][27] However, research regarding the physicochemical properties of TFs fabricated with various ratios of Mo and Te at room temperature is rare. Moreover, the MoTe 2 target was used in previous studies instead of using separate Mo and Te targets to control the composition of the TFs.…”

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confidence: 99%

Tailoring the surface properties of molybdenum oxytelluride thin films by its compositional ratio

Han,

Yoon,

Park

et al. 2024

Surface & Interface Analysis

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In this work, RF magnetron co‐sputtering was used to fabricate molybdenum oxytelluride thin films with different atomic ratios. Scanning electron micrographs and atomic force micrographs revealed that pure Mo thin films were segregated. Thin films with 40% Te content portrayed needle‐like structures and thus had the largest Rq value of 2.48 nm. Contact angle measurements further supported the findings as the thin films with 40% Te content were the most hydrophobic. X‐ray photoelectron spectroscopy results revealed that the major oxidation states of Mo from Te‐poor to Te‐rich TFs were changed from high (+6) to low (+4 and/or +2). X‐ray diffraction data showed that peaks pertaining to molybdenum oxide species appeared, notably at 33.048° and 33.115°. Ultraviolet photoelectron spectroscopy and Kelvin probe measurements evinced that the work function increases with increasing Te content. Four‐point probe measurements revealed that molybdenum oxytelluride thin films tend to have higher electrical conductivity than pure Mo and Te thin films.

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Etching and Compositional Ratio Effect on the Surface Properties of Bismuth Telluride Thin Films

Mun,

Han,

Yoon

et al. 2024

Surfaces

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Bismuth telluride has garnered considerable attention owing to its versatile properties applicable in thermoelectric and antibacterial domains, as well as its intriguing topological insulating properties. In this work, our group fabricated bismuth telluride thin films with various ratios using radio frequency magnetron sputtering. The surface properties of these thin films were thoroughly analyzed by employing a diverse array of analytical techniques, including X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), four-point probe and contact angle (CA) measurements. Specifically, our XPS findings indicated that Bi is more susceptible to oxidation than Te following Ar+-ion etching. Pure Te thin films exhibited the highest Rq value of 31.2 nm based on AFM and SEM results due to their larger grain sizes. The XRD patterns revealed a peak at 27.75° for thin films with 20% Te, attributed to its rhombohedral structure. Moreover, thin films with 30% Te yielded the highest weighted average work function with a value of 4.95 eV after etching. Additionally, pristine Bi and Te thin films demonstrated the most robust hydrophobic properties compared to intermediate-composition thin films, as determined by CA measurements.

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Physicochemical Properties of SnTe Thin Films Dependent on Compositional Ratios

Cited by 3 publications

References 61 publications

Annealing Temperature Effect on the Surface Properties of the MoSe Thin Films

Annealing Temperature Effect on the Surface Properties of the MoSe Thin Films

Tailoring the surface properties of molybdenum oxytelluride thin films by its compositional ratio

Etching and Compositional Ratio Effect on the Surface Properties of Bismuth Telluride Thin Films

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