For solar energy conversion, not only must a semiconductor absorb incident solar radiation efficiently but also its photoexcited electron-hole pairs must further be separated and transported across interfaces. Charge transfer across interfaces requires consideration of both thermodynamic driving forces as well as the competing kinetics of multiple possible transfer, cooling, and recombination pathways. In this work, we demonstrate a novel strategy for extracting holes from photoexcited CdSe quantum dots (QDs) based on interfacing with β-Pb 0.33 V 2 O 5 nanowires that have strategically positioned mid-gap states derived from the intercalating Pb 2+ -ions. Unlike mid-gap states derived from defects or dopants, the states utilized here are derived from the intrinsic crystal structure and are thus homogeneously distributed across the material. CdSe/β-Pb 0.33 V 2 O 5 heterostructures were assembled using two distinct methods: successive ionic layer adsorption and reaction (SILAR) and linker-assisted assembly (LAA). Transient absorption spectroscopy measurements indicate that electrons and holes can be transferred from the photoexcited CdSe QDs to the conduction and mid-gap states, respectively, of β-Pb 0.33 V 2 O 5 nanowires for both types of heterostructures. Holes were transferred on time scales less than 1 ps, whereas electrons were transferred more slowly on time scales of approximately 2 ps. In contrast, for analogous heterostructures consisting of CdSe QDs interfaced with V 2 O 5 nanowires (wherein mid-gap states are absent), only electron transfer was observed. Interestingly, electron transfer was readily achieved for CdSe QDs interfaced with V 2 O 5 nanowires by the SILAR method; however, for interfaces incorporating molecular linkers, electron transfer was observed only upon excitation at energies substantially greater than the band-gap absorption threshold of CdSe. Transient absorbance decay traces reveal longer exciton lifetimes (1-3 µs) for CdSe/β-Pb 0.33 V 2 O 5 heterostructures relative to bare β-Pb 0.33 V 2 O 5 nanowires (0.2-0.6 µs); the difference is attributed to surface passivation of intrinsic surface defects in β-Pb 0.33 V 2 O 5 upon interfacing with CdSe (290 words).