Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon

Modeling high-concentration phosphorus diffusion in crystalline silicon

“…It should be noted that the presented calculation of phosphorus diffusion was carried out under the assumption of the dominant role of the process of migration of vacancy-impurity complexes in the case of a low concentration of the impurity where there are no characteristic features of high-concentration doping. This assumption is consistent with the concentration dependence of the diffusion coeffi cient [33], since the presence of the term, which is proportional to the electron concentration squared, is easily explained by the formation of complexes of phosphorus with doubly negatively charged vacancies. Nonetheless, many works (e.g., [35][36][37][38][39]) have pointed to the dominant role of the indirect interstitial transfer mechanism, within whose framework one assumes the interaction of silicon interstitials with phosphorus atoms in the substitutional position, under any diffusion conditions; the share of this diffusion mechanism is close to 100%.…”

“….047 × 10 -8 μm 2 /s, and the parameters describing the concentration dependence of the diffusion coeffi cient β 1 = 1 i i D D × = 0.00035 and β 2 = 2 i i D D × = 0.008 were taken from [33]. The value of the relative contribution of the indirect interstitial mechanism of transfer of impurity atoms in low-concentration diffusion f i = F i D /D i = 0.084 was taken from [34], which gives the values E…”

Progress in high resolution atomic force microscopy in biology

“…We have carefully studied the suitability of mica for this purpose (Yang et al 1994a), because any surface features that could complicate the AFM image should be avoided. For example, glass and silicon wafers both have nm scale corrugations, although the latter can be made atomically flat if the oxidation process is controlled (Fair, 1981;Nicollian & Brews, 1982). It turns out that mica has been a remarkable substrate, for nearly all proteins we have tried adsorbed to it quite well with very good stability.…”

Ultra-Rapid Thermal Process for ULSIs

“…In CMOS LSI, the maximum thermal budget is limited by short channel effect in PMOSFETs because the diffusion of B is faster than that of n-type impurity such as As and P. Therefore, it is better to consider the activation energy of B diffusion. Fair reported the value of 3.46 eV as the activation energy for B diffusion [12] and Hill reported the value of 4.1 eV for the diffusion and 5.1 eV for electrical activation [13].…”