Physics and technology of electronic insulator-to-metal transition (E-IMT) for record high on/off ratio and low voltage in device applications

Lin, Jianqiang; Alam, Khan; Ocola, Leonidas E.; Zhang, Zhen; Datta, Suman; Ramanathan, Shriram; Guha, Supratik

doi:10.1109/iedm.2017.8268446

Cited by 8 publications

(11 citation statements)

References 14 publications

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“…The IMT strength can be controlled by substrate temperature during film deposition, oxygen partial pressure during growth, and the choice of substrates (Savo et al, 2015 ). In this study, we used a VO 2 thin film with IMT strength of 2 × 10 5 (Lin et al, 2017 ).…”

Section: Methodsmentioning

confidence: 99%

“…A “neck-down” design for the contact were used as illustrated in Figure 1B . The neck-down device drives only a small volume of the VO 2 into transition and reduces the voltage required to trigger the transition (Lin et al, 2017 ). In our experiment, the variation in material property is limited.…”

Section: Methodsmentioning

confidence: 99%

“…Figure 1A shows the schematic of the VO 2 devices under DC probing and Figure 1B is the top view of the lateral VO 2 device with a “neck-down” layout. The “neck-down” layout is used to minimize the volume of VO 2 that undergoes transition (Lin et al, 2017 ). It leads to lower critical transition voltage (V c ) and lower power in the switching operation.…”

Section: Methodsmentioning

confidence: 99%

“…Figure 1C shows a measured current vs. voltage characteristic under DC condition. A hysteresis sweep is performed and the switch between insulator-state and metal-state is reversible if the operation satisfies the safe criteria introduced in Lin et al ( 2017 ).…”

Section: Methodsmentioning

confidence: 99%

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Vanadium Dioxide Circuits Emulate Neurological Disorders

2018

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Information in the central nervous system (CNS) is conducted via electrical signals known as action potentials and is encoded in time. Several neurological disorders including depression, Attention Deficit Hyperactivity Disorder (ADHD), originate in faulty brain signaling frequencies. Here, we present a Hodgkin-Huxley model analog for a strongly correlated VO2 artificial neuron system that undergoes an electrically-driven insulator-metal transition. We demonstrate that tuning of the insulating phase resistance in VO2 threshold switch circuits can enable direct mimicry of neuronal origins of disorders in the CNS. The results introduce use of circuits based on quantum materials as complementary to model animal studies for neuroscience, especially when precise measurements of local electrical properties or competing parallel paths for conduction in complex neural circuits can be a challenge to identify onset of breakdown or diagnose early symptoms of disease.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Vanadium Dioxide Circuits Emulate Neurological Disorders

2018

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“…Phase change materials showing metal-insulator transition (MIT), especially VO2 15 , have been widely explored as a platform to achieve electrical oscillations [15,16], often with oscillation frequency up to 9 MHz [17] and operation voltage below 1 V [18]. VO2 undergoes a concomitant first-order structural [19] and electrical transition [20] with a large 5 orders of magnitude change in the electrical conductivity at 68°C in bulk single crystals [21].…”

Section: Introductionmentioning

confidence: 99%

Low-Power Microwave Relaxation Oscillators Based on Phase-Change Oxides for Neuromorphic Computing

Zhao

Ravichandran

2019

Phys. Rev. Applied

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Neuro-inspired computing architectures are one of the leading candidates to solve complex, large-scale associative learning problems. The two key building blocks for neuromorphic computing are the synapse and the neuron, which form the distributed computing and memory units. Solid state implementations of these units remain an active area of research. Specifically, voltage or current controlled oscillators are considered a minimal representation of neurons for hardware implementations. Such oscillators should demonstrate synchronization and coupling dynamics for demonstrating collective learning behavior, besides the desirable individual characteristics such as scaling, power, and performance. To this end, we propose the use of nanoscale, epitaxial heterostructures of phase change oxides and oxides with metallic conductivity as a fundamental unit of an ultralow power, tunable electrical oscillator capable of operating in the microwave regime. Our simulations show that optimized heterostructure design with low thermal boundary resistance can result in operation frequency of up to 3 GHz and power consumption as low as 15 fJ/cycle with rich coupling dynamics between the oscillators.

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Tuning the Intrinsic Stochasticity of Resistive Switching in VO₂ Microresistors

Bidoul,

Roisin,

Flandre

2024

Nano Lett.

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Vanadium dioxide (VO 2 ) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO 2 microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements across numerous cycles. Our results highlight that the cycle-to-cycle variations in threshold voltage increase as the grain size becomes comparable to the device dimensions. We also present observations of multimodal threshold voltage distributions in the smaller-length resistors. To understand the underlying phenomenon, we investigate the relationship between the device insulating resistance and threshold voltage distributions, showing that these modes could correspond to distinct percolation paths and filaments. Our findings provide the first experimentally verified guidelines for designing VO 2 devices with minimized/maximized stochasticity, depending on the targeted application.

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Physics and technology of electronic insulator-to-metal transition (E-IMT) for record high on/off ratio and low voltage in device applications

Cited by 8 publications

References 14 publications

Vanadium Dioxide Circuits Emulate Neurological Disorders

Vanadium Dioxide Circuits Emulate Neurological Disorders

Low-Power Microwave Relaxation Oscillators Based on Phase-Change Oxides for Neuromorphic Computing

Tuning the Intrinsic Stochasticity of Resistive Switching in VO₂ Microresistors

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Physics and technology of electronic insulator-to-metal transition (E-IMT) for record high on/off ratio and low voltage in device applications

Cited by 8 publications

References 14 publications

Vanadium Dioxide Circuits Emulate Neurological Disorders

Vanadium Dioxide Circuits Emulate Neurological Disorders

Low-Power Microwave Relaxation Oscillators Based on Phase-Change Oxides for Neuromorphic Computing

Tuning the Intrinsic Stochasticity of Resistive Switching in VO2 Microresistors

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Product

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Tuning the Intrinsic Stochasticity of Resistive Switching in VO₂ Microresistors