Physics-Based Analytical Formulation of the Soft Error Rate in CMOS Circuits

Autran, Jean‐Luc; Munteanu, Daniéla

doi:10.1109/tns.2023.3263106

Cited by 2 publications

References 34 publications

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New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Autran,

Munteanu

2023

Journal of Applied Physics

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Charge diffusion from an ion track and its collection by a biased contact in a semiconductor domain is modeled and analyzed within the framework of the so-called diffusion–collection approach. We successively examine the case of charge diffusion from a point source and from a linear distribution, introducing and discussing the concept of collection velocity at the point where the collection current is evaluated. Analytical formulations of the collected charge, collection current, and collection velocity are developed. Implications for the calculation of the soft error rate in complementary metal-oxide-semiconductor circuits exposed to ionizing particles are derived. Finally, our model provides new insights into the correct definition of the charge collection velocity in collection–diffusion models.

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New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Autran,

Munteanu

2023

Journal of Applied Physics

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Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

Munteanu,

Autran

2024

Advances in Semiconductor Physics and Devices [Working Title]

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When an ionizing particle passes through a semiconductor device, it transfers energy and generates electron-hole pairs along its path. The excess carriers are subsequently transported throughout the semiconductor’s volume via ambipolar diffusion until they either recombine or are collected and extracted typically by a biased contact or a reverse-biased p-n junction. To predict the transient electrical behavior of complementary metal-oxide semiconductor (CMOS) devices and circuits when exposed to ionizing radiation and assess their soft error rate (SER), it is fundamental to accurately model these diverse physical processes. In this chapter, we present a comprehensive modeling and analysis of the diffusion and collection mechanisms of radiation-induced charges through a semiconductor device. Analytical formulations of the collected charge, collection current, and collection velocity are developed. These equations are further employed to establish an analytical formulation of the soft error rate (SER), explaining its exponential dependence on the critical charge of the circuit. This formulation also links the SER to various physical and technological parameters, as well as to the characteristics of the radiation.

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Physics-Based Analytical Formulation of the Soft Error Rate in CMOS Circuits

Cited by 2 publications

References 34 publications

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

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