Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Li, Hai; Nikonov, Dmitri E.; Lin, Chia‐Ching; Liao, Yu-Ching; Hsu, C.-L.; Naeemi, Azad; Young, Ian A.

doi:10.1109/jxcdc.2022.3143130

Cited by 9 publications

(2 citation statements)

References 27 publications

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“…Similar nonmonotonic behavior was reported in Ref. [32]. Substantial valley polarizations are easily achieved at smaller µ 2D due to the fact that valley depopulation takes place with greater ease at lower µ 2D owing to the larger resistivity.…”

Section: Theoretical Methodsupporting

confidence: 87%

Spin Torque Generated by Valley Hall Effect in WSe2

de Sousa,

Sammon,

Kim

et al. 2022

Preprint

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Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins possessing long spin diffusion lengths of hundreds of nanometers. In this work, we show that the injection of a pure valley current, induced by valley Hall effect in a WSe2 monolayer, imparts a spin torque on the magnetization of an overlaid Fe or CoFe in a tunneling structure. The torque efficiency is found to be comparable to that in conventional perpendicular magnetic tunnel junctions and can be further optimized with valley Hall angle in WSe2. The valley nature of the spin torque gives rise to out-of-plane damping-like torques in a current-in-plane configuration, vanishing charge transport perpendicular-to-the-plane as well as torque efficiency tunable through gating.

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Section: Theoretical Methodsupporting

confidence: 87%

Spin Torque Generated by Valley Hall Effect in WSe2

de Sousa,

Sammon,

Kim

et al. 2022

Preprint

Self Cite

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“…[ 9,10 ] Such TM‐based perovskites have garnered substantial attention due to their adaptability in spintronic devices, magneto‐couplers, actuators, and optoelectronic sensors. [ 11–17 ] Specifically, perovskites such as BaPbO 3 have garnered significant attention due to their potential utilization as antiferromagnetic materials within the realm of superconductivity. [ 18 ]…”

Section: Introductionmentioning

confidence: 99%

Pressure‐Induced Effects on BaPbO₃: A Prospectively Valuable Material for Piezoelectric Applications via DFT

Alathlawi,

Tariq,

Al‐Dossari

et al. 2024

Cryst. Res. Technol.

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Employing density functional theory within the Wien2k code, first‐principle calculations are conducted to explore the impact of applied pressure up to 80 GPa on the structural, mechanical, thermal, and electronic characteristics of BaPbO3. Demonstrating metallic behavior with ductile attributes, BaPbO3 exhibits a decreasing anisotropic nature under escalating pressure. Evaluation of cubic elastic constants, optimization curves, and enthalpy of formation indicates the compound's mechanical and thermodynamic stability under high pressure conditions. Calculated values of C11 and C44 reflect heightened resistance to unidirectional compression and increased stiffness under pressure. These mechanical properties position BaPbO3 as a promising candidate for diverse industrial applications across varying pressure ranges, including utilization in piezoelectric materials (0–20 GPa) and high‐pressure sensors. Additionally, charge density contours suggest a combination of ionic (Ba─Pb) and covalent bonding (Pb─O) within the compound's constituent atoms. The material can exhibit potential applications as a piezoelectric sensor at 0–20 GPa, high‐pressure actuators ≈20 GPa, and as a high melting temperature resistive substrate for laser welding and cutting materials.

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Spintronics for achieving system-level energy-efficient logic

Incorvia,

Xiao,

Zogbi

et al. 2024

Nat Rev Electr Eng

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Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Cited by 9 publications

References 27 publications

Spin Torque Generated by Valley Hall Effect in WSe2

Spin Torque Generated by Valley Hall Effect in WSe2

Pressure‐Induced Effects on BaPbO₃: A Prospectively Valuable Material for Piezoelectric Applications via DFT

Spintronics for achieving system-level energy-efficient logic

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Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Cited by 9 publications

References 27 publications

Spin Torque Generated by Valley Hall Effect in WSe2

Spin Torque Generated by Valley Hall Effect in WSe2

Pressure‐Induced Effects on BaPbO3: A Prospectively Valuable Material for Piezoelectric Applications via DFT

Spintronics for achieving system-level energy-efficient logic

Contact Info

Product

Resources

About

Pressure‐Induced Effects on BaPbO₃: A Prospectively Valuable Material for Piezoelectric Applications via DFT