Physics of Amorphous Semiconductors

Morigaki, Kazuo

doi:10.1142/2011

Cited by 140 publications

(90 citation statements)

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“…It is worth noting that all the films do not exhibit any double anomaly of Hall voltage sign as reported in amorphous semiconductors. 36 This indicates that even the 10-nm-thick c-Si:H film has drift carriers and the scattering length is long enough for the Hall effect measurement condition. Although some scattering is found in the measured values due to the difficulty in an accurate measurement of the Hall voltage with high impedance samples, the room temperature carrier density only decreases from 3.7 ϫ10 20 /cm 3 to 1.1ϫ10 20 /cm 3 with decreasing film thickness while the conductivity falls markedly by one order of magnitude.…”

Section: Resultsmentioning

confidence: 98%

Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Kamiya

Nakahata

Tan

et al. 2001

Journal of Applied Physics

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Microcrystalline silicon ( c-Si:H) thin films were prepared at 300°C on glass. Their structure and transport properties were studied in a wide range of film thickness ranging from 10 nm to 1 m. The crystal fraction increases monotonously from ϳ64% to ϳ100% as film thickness increases. Electron mobility first increases with increasing film thickness at thicknesses smaller than 50 nm but saturates at larger thickness. This mobility behavior is explained by percolation transport through crystalline grains. These results are different from those obtained with preferentially oriented polycrystalline silicon films. It is related to the difference in the microstructure evolution in which subsequent film growth is influenced by the growth surface structure. A single-electron transistor fabricated in 30-nm-thick c-Si:H exhibits Coulomb blockade effects at 4.2 K. This result indicates that amorphous phases which exist between crystalline grains behave as tunnel barrier for electrons.

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Section: Resultsmentioning

confidence: 98%

Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Kamiya

Nakahata

Tan

et al. 2001

Journal of Applied Physics

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“…A similar approach is often used to model amorphous semiconductors. 79 We assume that the density of states near the conduction band edge in a perfect oxide crystal can be described by:…”

Section: Ph Dependence Of Photophysicsmentioning

confidence: 99%

pH-Dependent Electron Transfer from Re-bipyridyl Complexes to Metal Oxide Nanocrystalline Thin Films

et al. 2005

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Photoinduced interfacial electron transfer (ET) from molecular adsorbates to semiconductor nanoparticles has been a subject of intense recent interest. Unlike intramolecular ET, the existence of a quasicontinuum of electronic states in the solid leads to a dependence of ET rate on the density of accepting states in the semiconductor, which varies with the position of the adsorbate excited-state oxidation potential relative to the conduction band edge. For metal oxide semiconductors, their conduction band edge position varies with the pH of the solution, leading to pH-dependent interfacial ET rates in these materials. In this work we examine this dependence in Re(L P )(CO) 3 Cl (or ReC1P) [L P ) 2,2′-bipyridine-4,4′-bis-CH 2 PO(OH) 2 ] and Re-(L A )(CO) 3 Cl (or ReC1A) [L A ) 2,2′-bipyridine-4,4′-bis-CH 2 COOH] sensitized TiO 2 and ReC1P sensitized SnO 2 nanocrystalline thin films using femtosecond transient IR spectroscopy. ET rates are measured as a function of pH by monitoring the CO stretching modes of the adsorbates and mid-IR absorption of the injected electrons. The injection rate to TiO 2 was found to decrease by 1000-fold from pH 0-9, while it reduced by only a factor of a few to SnO 2 over a similar pH range. Comparison with the theoretical predictions based on Marcus' theory of nonadiabatic interfacial ET suggests that the observed pH-dependent ET rate can be qualitatively accounted for by considering the change of density of electron-accepting states caused by the pH-dependent conduction band edge position.

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“…2͒. On the other hand, for chalcogenide glasses, despite considerable interests in photoinduced phenomena, 3 studies on nonlinear phenomena are relatively limited. 4 Most experiments have been carried out at selected wavelengths, 4 -14 and spectroscopic studies are a few.…”

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“…That is, the absorption edge consists of three functional curves, i.e., a square-root dependence (␣у10 3 cm Ϫ1 ), the so-called Urbach edge (10 3 у␣у10 0 cm Ϫ1 ), and an exponential weak-absorption tail (10 0 cm Ϫ1 у␣), the origins of these features being still controversial. 3 Specifically, it is important to recognize that the weak-absorption tail limits optical transparency of chalcogenide glasses; 18 a marked attenuation, 50 dB/km, in highly purified As 2 S 3 optical fibers 19 being contrastive to small attenuation in oxide ͓0.2 dB/km in SiO 2 ͑Ref. 20͔͒ and halide ͑0.5 dB/km in ZrF 4 -based 21 ͒ glasses.…”

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Two-photon absorption spectroscopy of As2S3 glass

Tanaka

2002

Applied Physics Letters

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Physics of Amorphous Semiconductors

Cited by 140 publications

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Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

pH-Dependent Electron Transfer from Re-bipyridyl Complexes to Metal Oxide Nanocrystalline Thin Films

Two-photon absorption spectroscopy of As2S3 glass

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Physics of Amorphous Semiconductors

Cited by 140 publications

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Growth, structure, and transport properties of thin (&gt;10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Growth, structure, and transport properties of thin (&gt;10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

pH-Dependent Electron Transfer from Re-bipyridyl Complexes to Metal Oxide Nanocrystalline Thin Films

Two-photon absorption spectroscopy of As2S3 glass

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Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor