2017
DOI: 10.1038/s41598-017-17033-6
|View full text |Cite
|
Sign up to set email alerts
|

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

Abstract: The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu+3 ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu+3 ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished throug… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 45 publications
0
3
0
Order By: Relevance
“…The internal quantum efficiency of a GaN/GaN:Eu/GaN device was calculated in a similar approach to ref. 46 . The introduction of surface plasmon coupled active region in GaN:Eu results in an order of magnitude increase in the internal quantum efficiency of the electrically-driven devices, and provides a reduction of efficiency-droop up to relatively high current density ( J ).…”
Section: Impact Of Purcell Factor On Internal Quantum Efficiencymentioning
confidence: 99%
“…The internal quantum efficiency of a GaN/GaN:Eu/GaN device was calculated in a similar approach to ref. 46 . The introduction of surface plasmon coupled active region in GaN:Eu results in an order of magnitude increase in the internal quantum efficiency of the electrically-driven devices, and provides a reduction of efficiency-droop up to relatively high current density ( J ).…”
Section: Impact Of Purcell Factor On Internal Quantum Efficiencymentioning
confidence: 99%
“…With the advantages over other conventional light sources such as incandescent bulbs, halogen lamps, xenon HID lamps, LED has progressed rapidly to be applied in general lighting [2] and many special fields such as plant lighting [3], automotive lighting [4], healthcare lighting [5] and visible light communication (VLC) [6]. However, the luminous intensity of a single LED package can't satisfy the high power and high illumination application because of the power limit of an individual LED package and its efficiency droop effect [7][8][9]. So, the LED array prepared by several arranged LED individuals [10][11][12] is emerged in high power applications, such as street lighting, automotive lighting, detector lighting, etc.…”
Section: Introductionmentioning
confidence: 99%
“…The incorporation of rare earth elements, such as Er or Eu, into semiconductor hosts gives rise to sharp, atomiclike and temperature independent emission lines under either optical or electrical excitation [1,2,[9][10][11]. Er ions with intra-4f shell transitions from its first excited state ( 4 I 13/2 ) to the ground state ( 4 I 15/2 ) produce 1.5 µm emission, which falls within the minimum loss window of optical fibers for optical communications.…”
Section: Introductionmentioning
confidence: 99%