Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

Oh, Hyunseok; Han, Bongtae; McCluskey, Patrick; Han, Changwoon; Youn, Byeng D.

doi:10.1109/tpel.2014.2346485

Cited by 411 publications

(175 citation statements)

References 107 publications

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“…This is perhaps why there are a variety of aging trends reported in the literature when examining the forward voltage of a device. For example, increases in the forward voltage in IGBTs of 5%, 7%, and 20% have been reported before module failure occurs [7,9,11,15]. At the same time, decreases of up to 25% were present in other studies [7,16,18].…”

Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 89%

“…The development of condition monitoring systems for power semiconductor modules has been an active research area in the past decade [6][7][8]. The majority of research has focused on monitoring an electrical parameter that indicates degradation.…”

Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 99%

“…For example, increases in the forward voltage in IGBTs of 5%, 7%, and 20% have been reported before module failure occurs [7,9,11,15]. At the same time, decreases of up to 25% were present in other studies [7,16,18]. Data for MOSFETs are harder to compare since the majority of reliability studies seem to be performed on IGBTs.…”

Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 99%

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Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

2017

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Abstract:In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal-known as a kelvin-source terminal-is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

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Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 89%

Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 99%

Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 99%

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Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

2017

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“…Among them, the aluminum bond fatigue [10], [20] and solder fatigue [21] are the two main failure mechanism of IGBT modules. The aluminum bond wire fatigue including bond wire lift off and heel cracking is caused by the temperature fluctuation and unmatched CTE at the lead-to-chip connection point [12], [22]. The solder layer fatigue refers to the phenomenon of solder cracks and holes under long-term work due to CTE mismatch of the solder connection between the silicon chip and the baseplate [21].…”

Section: Failure Modes and Mechanism Of Igbt Modulesmentioning

confidence: 99%

“…The theoretical analysis and experimental results show that the saturation voltage drop (V ce_sat ), threshold voltage (V th ), transconductance (K p ), short circuit current (I SC ), I-Vcharacteristics, switch transient signal (t on 、t off 、V GE ), gate parasitic parameters, case temperature (T c ), junction temperature (T j ) et al can all be used as the indicators [12], [18], [22]. Part of the variation law of the ageing precursor with the ageing process is shown in Fig.…”

Section: B Condition Monitoring Indicators Of Igbt Modulementioning

confidence: 99%

Review of Power Semiconductor Device Reliability for Power Converters

et al. 2017

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Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator

Ismail

Saïdi

Sayadi

et al. 2020

Int Trans Electr Energ Syst

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Power electronics converters (PCVs) such as inverters and rectifiers are crucial parts in industrial applications and energy conversion and are commonly used in several power conversion systems. Previous works have only focused on the fault diagnosis of PCVs; however, recently more consideration has been paid on predicting failures. Thus, reinforcing the reliability of power semiconductor devices is crucial for extending the lifetime of the PCVs‐based electrical power systems. This paper presents a novel prognostic approach for estimating the remaining useful life (RUL) of the power insulated gate bipolar transistors (IGBTs) used in PCVs. An IGBT‐accelerated aging database set under thermal overstress is utilized to evaluate the proposed approach. A data‐driven method based on the feature extraction process and a modified maximum likelihood estimator (MLE) technique to RUL estimation of IGBT have been developed and applied. This method is validated to effectively predict the PVC failures based on an accelerated aging experimental data set.

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Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

Cited by 411 publications

References 107 publications

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Review of Power Semiconductor Device Reliability for Power Converters

Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator

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