Abstract:In this paper, it is shown that for stable, steady state operation of devices typical of microwave and millimeter wave electronics, no negative differential capacitance is possible with conventional thinking. However, it may be possible, with strain engineering of materials, to obtain some if not all elements of the differential capacitance tensor which are negative. Rigorous derivations are provided based upon analyzing the physics using thermodynamic phenomenological free energy. It should be emphasized that… Show more
The Vanadium redox flow battery has been intensively examined since the 1970s, with researchers looking at its electrochemical time varying electrolyte concentration time variation equations (both tank and cells, for...
The Vanadium redox flow battery has been intensively examined since the 1970s, with researchers looking at its electrochemical time varying electrolyte concentration time variation equations (both tank and cells, for...
Density of states (DOS) and electronic bandstructure diagrams with ε(k) versus k are found for particular allotropes of borophene with much improved accuracy by ab initio quantum calculations using hybrid functionals of several types. The particular types of hybrid functionals are delineated in detail. Varying levels of k-point discretization are utilized to evaluate accuracy. Structural relaxation has been carefully applied prior to electronic bandstructure simulations. Results indicate whether or not one has regions in k-space which display Dirac type non-gapped behavior or parabolic gapped behavior. This work is required in order to determine what types of electronic uses 2D single atomic layer borophene is appropriate for in modern nanoscopic devices.
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