Physics of high-power InGaN/GaN lasers

Piprek, Joachim; Nakamura, Shuji

doi:10.1049/ip-opt:20020441

Cited by 161 publications

(85 citation statements)

References 26 publications

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“…3 is less than 1 MV/cm due to partial screening. However, the injected quantum well carrier density is not large enough to completely screen the built-in field, which is in agreement with our previous investigation of edge-emitting lasers [6]. This can be easily checked by converting the interface charge densities given in Table I into a uniform quantum well carrier density of 2.4 10 cm needed for full screening.…”

supporting

confidence: 87%

mentioning

confidence: 60%

“…The polarization significantly deforms the energy band diagram. This is remarkable considering the relatively high injection current density of kA/cm used in this simulation, which is more than triple the threshold current density of similar edge-emitting lasers [6]. Surprisingly, the built-in polarization field is not screened as is commonly assumed for laser operation.…”

mentioning

confidence: 81%

“…More details of the model are described elsewhere [5]. Previously, we used a very similar model to study edge-emitting high-power InGaN-GaN lasers, demonstrating good agreement with measurements [6].Here, we focus on InGaN-GaN vertical-cavity surface-emitting lasers (VCSELs), which are expected to exhibit several Manuscript …”

mentioning

confidence: 99%

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Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

Piprek

DenBaars

Nakamura

2006

IEEE Photon. Technol. Lett.

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Abstract-We investigate the effect of built-in spontaneous and piezoelectric polarization on the internal device physics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with strained InGaN quantum wells. Advanced device simulation is applied to a previously manufactured device design featuring dielectric mirrors and an indium-tin-oxide current injection layer. Contrary to common perception, we show: 1) that only a small fraction of the built-in quantum-well polarization is screened at typical injection current densities and 2) that the polarization of the AlGaN electron stopper layer has a strong effect on the VCSEL threshold current which can be partly compensated for by higher p-doping.Index Terms-Electron leakage, GaN-based light emitter, InGaN quantum well, numerical simulation, piezoelectric effect, polarization, vertical-cavity surface-emitting laser (VCSEL). P IEZOELECTRIC and spontaneous polarization is known to be much stronger in c-plane GaN-based alloys than in other III-V compounds. Extensive experimental and theoretical work has been invested in this phenomenon, and nonlinear analytical approximations have been derived for calculating the built-in polarization [1]. Polarization strongly affects radiative recombination processes in strained InGaN quantum wells which are typically employed in GaN-based light-emitting devices [2]. The polarization-induced electrostatic field leads to a separation of electrons and holes within the quantum well and thereby to a reduction of the photon emission rate. However, for GaN-based lasers, polarization effects are usually considered less important because the high density of electrons and holes in the quantum wells is assumed to screen the built-in polarization charges [3].Using advanced device simulation, we investigate the effects of polarization on the internal physics and the threshold current of InGaN-GaN laser diodes. Our software self-consistently combines wurtzite quantum well band structure calculations, radiative and nonradiative carrier recombination, carrier drift and diffusion, and optical mode computation [4]. More details of the model are described elsewhere [5]. Previously, we used a very similar model to study edge-emitting high-power InGaN-GaN lasers, demonstrating good agreement with measurements [6].Here, we focus on InGaN-GaN vertical-cavity surface-emitting lasers (VCSELs), which are expected to exhibit several Manuscript

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supporting

confidence: 87%

mentioning

confidence: 60%

mentioning

confidence: 81%

mentioning

confidence: 99%

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Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

Piprek

DenBaars

Nakamura

2006

IEEE Photon. Technol. Lett.

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“…All these uncertainties make it difficult to verify models for the photon generation rates. We here use the same free-carrier model which previously resulted in good agreement with measurements on InGaN/GaN inplane lasers [11]. More sophisticated many-body models are presented in [38].…”

Section: Photon Generation In the Quantum Wellsmentioning

confidence: 95%

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Piprek¹,

DenBaars

et al. 2007

Nitride Semiconductor Devices: Principles and Simulation

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Data Storage, Optical

Milster

2004

Digital Encyclopedia of Applied Physics

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In its most general definition, optical data storage is simply using light as a tool to store and retrieve data. Optical data storage is found in popular consumer products. Compact Discs (CDs), Digital Versatile Discs (DVDs), and MiniDiscs (MDs), are all forms of optical data storage. More advanced forms of optical data storage include high‐speed devices and library products. All optical data storage devices use optical principles to achieve high data density, rugged packaging, reliable information retrieval, and cost‐effective production. There are many forms of optical storage media and many types of optical systems used to scan data. This chapter discusses the basic principles of optical data storage, types of commercial optical media available in 2003, several performance parameters, and some interesting prospects for future systems.

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Physics of high-power InGaN/GaN lasers

Cited by 161 publications

References 26 publications

Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Data Storage, Optical

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