2013
DOI: 10.1109/tns.2013.2260357
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Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction

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Cited by 160 publications
(51 citation statements)
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“…Also, single event upset (SEU) due to strikes of ionizing particles [21] is a difficult problem for SRAM scaling. SEU rate depends on the number of stored electrons which is decreasing with scaling.…”
Section: Sram Scalingmentioning
confidence: 99%
“…Also, single event upset (SEU) due to strikes of ionizing particles [21] is a difficult problem for SRAM scaling. SEU rate depends on the number of stored electrons which is decreasing with scaling.…”
Section: Sram Scalingmentioning
confidence: 99%
“…Therefore, N DAV = 8515. First of all, let us pay attention to the raw data obtained in the experiments (stars), in comparison with the theoretical value (straight line) 2 . Some values strongly deviate from the predictions deduced from Eq.…”
Section: A Step 1: Extraction Of Main Critical Values By Xoringmentioning
confidence: 99%
“…Otherwise, if the charge generated by the particle is shared by adjacent cells [2], a Multiple Cell Upset (MCU) occurs. Multiple Bit Upsets (MBUs) are a particular kind of MCUs where the flipped bits belong to the same memory word.…”
mentioning
confidence: 99%
“…The increased transistors are working like resistance because of being in linear region, which restrict the feedback path. Moreover, with the development of CMOS process technology scaling, the influences of single event multiple-node upsets because of charge sharing are becoming more severe [7][8]. So, more reliable memory designs have to be considered.…”
Section: Introductionmentioning
confidence: 99%