Perovskite Photovoltaics and Optoelectronics 2021
DOI: 10.1002/9783527826391.ch5
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Physics of Perovskite Solar Cells: Efficiency, Open‐Circuit Voltage, and Recombination

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Cited by 4 publications
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“…The constant low-field mobilities (µ n and µ p ) are used for each layer as a default model that is independent of doping concentration, carrier densities, and electric field and accounts for lattice scattering due to temperature [65]. Shockley-Read-Hall (SRH) and the Auger (AUGER) recombination models were considered for the ETL layers which are needed to consider the effects of defects (or traps) that cause states in the bandgap as well as third-order recombination process [73,74]. For active material, optical (OPTR) and SRH recombination models were chosen to take into account the effects of the band-band recombination process and trap [73,74].…”
Section: Silvaco Atlas-2d Simulation Methodologymentioning
confidence: 99%
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“…The constant low-field mobilities (µ n and µ p ) are used for each layer as a default model that is independent of doping concentration, carrier densities, and electric field and accounts for lattice scattering due to temperature [65]. Shockley-Read-Hall (SRH) and the Auger (AUGER) recombination models were considered for the ETL layers which are needed to consider the effects of defects (or traps) that cause states in the bandgap as well as third-order recombination process [73,74]. For active material, optical (OPTR) and SRH recombination models were chosen to take into account the effects of the band-band recombination process and trap [73,74].…”
Section: Silvaco Atlas-2d Simulation Methodologymentioning
confidence: 99%
“…Shockley-Read-Hall (SRH) and the Auger (AUGER) recombination models were considered for the ETL layers which are needed to consider the effects of defects (or traps) that cause states in the bandgap as well as third-order recombination process [73,74]. For active material, optical (OPTR) and SRH recombination models were chosen to take into account the effects of the band-band recombination process and trap [73,74]. The SRH model is also considered for HTL layers to have the effect of defects in the performance of the devices.…”
Section: Silvaco Atlas-2d Simulation Methodologymentioning
confidence: 99%