1992
DOI: 10.12693/aphyspola.82.523
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Physics of Resonant Tunnelling

Abstract: A description is given of resonant tunnelling processes in double-barrier semiconductor heterostructures from the point of view of sequential theory. If a magnetic field is applied in the plane of the barrier interfaces, the energy and transverse momentum of the electrons injected into the quantum well through the emitter tunnel barrier can be varied independently by changing the applied voltage and magnetic field. This technique can be used to probe the energy and momentum spectrum of the subband states in a … Show more

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Cited by 6 publications
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“…4 T) that, except for 8 close to 90', only the lowest Landau level is occupied. Resonant tunneling occurs when the energy of this discrete emitter state coincides with the energy e"ofa subband in the QW [11]. As the bias voltage V is varied the tunneling electrons thus scan the energylevel spectrum of the QW.…”
mentioning
confidence: 99%
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“…4 T) that, except for 8 close to 90', only the lowest Landau level is occupied. Resonant tunneling occurs when the energy of this discrete emitter state coincides with the energy e"ofa subband in the QW [11]. As the bias voltage V is varied the tunneling electrons thus scan the energylevel spectrum of the QW.…”
mentioning
confidence: 99%
“…For 8=90' both the emitter and QW states have plane-wave character in the transverse y, z directions. The tunneling matrix element only couples states with a velocity difference equal to that supplied by the Lorentz force as the electron traverses the mean distance between the 2DEG and nearside QW interface [11,12]. This requirement and that of energy conservation determine the allowed skipping states into which an electron can tunnel.…”
mentioning
confidence: 99%