Physikalisch-chemische Eigenschaften von ternären Verbindungen des Systems GeTe-Bi2Te3

Skoropanow, A. S.; Walewski, B. L.; Samal, G.I.; Al'fer, S. A.; Wetscher, A. A.

doi:10.1515/zpch-1987-26812

Cited by 5 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We also conducted differential scanning calorimetry (DSC) measurements. In figure 1, the crystallization and the melting temperatures of sputtered GBT alloys (GBT20, GBT30, GBT40) are shown as 259 [8,9]. Ge interatomic bonding strength (263.6 kJ mol −1 ) is higher than those of Bi (200.4 kJ mol −1 ) and Te (259.8 kJ mol −1 ).…”

Section: Resultsmentioning

confidence: 99%

Crystallization behavior of non-stoichiometric Ge–Bi–Te ternary phase change materials for PRAM application

Sun

Youm

Kim

2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We investigated the properties of a Ge-Bi-Te ternary chalcogenide thin film which was deposited on a SiO 2 /Si substrate by varying RF-sputtering power on the GeTe and Bi target. The aim was to search for an appropriate candidate for a new phase change memory. Various analyses are conducted in order to investigate the composition, phase separation, and crystallization behavior of the Ge-Bi-Te alloy. The XRD results of each annealed sample showed that the Ge-Bi-Te alloy crystallized into Ge 2 Bi 2 Te 5 , GeBi 2 Te 4 , GeBi 4 Te 7 phase at around 300 • C according to Ge content and expelled amorphous Ge crystallized as a single phase over 400 • C. Combining these with the differential scanning calorimetry (DSC) results, we demonstrated that T c and T m of the Ge-Bi-Te alloy are respectively higher and lower than those of conventional Ge-Sb-Te (GST) films. All the phases, including not only various Ge-Bi-Te ternary phases but also the Ge phase crystal structure, were also confirmed with highresolution transmission electron microscopy (HR-TEM) images and diffraction patterns. It is noted that some of the Ge 2 Bi 2 Te 5 grains show specific facetted planes such as {0113}, {0112}, and {0001}. Through successive analyses, we revealed the structural evolution of the Ge-Bi-Te alloy according to Ge contents and confirmed the potential of the Ge-Bi-Te alloy for phase-change random access memory (PRAM) applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Crystallization behavior of non-stoichiometric Ge–Bi–Te ternary phase change materials for PRAM application

Sun

Youm

Kim

2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

X-ray study and electrical properties of the layered Ge1 ± δBi2Te4 semiconducting compound

Karpinskii

Shelimova

Kretova

et al. 1994

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The mechanism of Ge incorporation into the Ge1 ± δBi2Te4 crystal lattice containing 21 atomic layers (three seven‐layer packets) per unit cell is investigated by X‐ray diffraction of powders or single crystals. It is found that superstoichiometric Ge orderly enters into van der Waals gaps between the seven‐layer packets. As a result, a 36‐layer lattice is formed in the crystal with one Ge atomic layer alternating with five seven‐layer packets. At small deviation from stoichiometry, conjugative fragments of 21‐ and 36‐layer lattices coexist in the crystal alternating in the direction of the C‐axis. The strong dependence of the electrical properties of Ge1 ± δBi2Te4 on the deviation from stoichiometry is found by measuring electrical resistivity (ϱ), Seebeck coefficient (α), Hall effect, and thermal conductivity (χ) at 300 K. The type of conductivity changes from p‐type at Ge deficiency to n‐type at Ge excess. A maximum of χ and a minimum of ϱ at the stoichiometric composition are found in the dependences of ϱ and χ on δ. The existence of potential barriers on the boundaries between conjugative fragments of 21‐ and 36‐layer lattices seems to be responsible for an increase of ϱ at Ge excess.

show abstract

Thermoelectric properties and crystal structure of ternary compounds in the Ge(Sn,Pb)Te–Bi 2 Te 3 systems

Кузнецова

Кузнецов

Rowe

2000

Journal of Physics and Chemistry of Solids

110

View full text Add to dashboard Cite

Physikalisch-chemische Eigenschaften von ternären Verbindungen des Systems GeTe-Bi2Te3

Cited by 5 publications

References 0 publications

Crystallization behavior of non-stoichiometric Ge–Bi–Te ternary phase change materials for PRAM application

Crystallization behavior of non-stoichiometric Ge–Bi–Te ternary phase change materials for PRAM application

X-ray study and electrical properties of the layered Ge1 ± δBi2Te4 semiconducting compound

Thermoelectric properties and crystal structure of ternary compounds in the Ge(Sn,Pb)Te–Bi 2 Te 3 systems

Contact Info

Product

Resources

About