Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

Zalden, Peter; Shu, Michael J.; Chen, Fanglin; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Sheridan C.; Shen, Z.‐X.; Landreman, Patrick; Brongersma, Mark L.; Fong, Scott W.; Wong, H.-S. Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; Hoegen, A. von; Wuttig, Matthias; Lindenberg, Aaron M.

doi:10.1103/physrevlett.117.067601

Cited by 65 publications

(42 citation statements)

References 39 publications

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“…[11,12] Phase change memory (PCM) devices exhibit the formation of crystalline filaments in an amorphous matrix. This behavior can be observed in chalcogenides such as complex tellurides [13] and e.g. in amorphous TiOx where crystalline Magnéli filaments form.…”

Section: Introductionmentioning

confidence: 87%

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

Strobel

Hansen

Dirkmann

et al. 2017

Journal of Applied Physics

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Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism.The device consists of an AlO x tunnel barrier and a NbO y /Au Schottky barrier sandwiched between Nb bottom electrode and Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e. oxidation state of the metals as well as concentration and distribution of oxygen ions, have a major influence on electronic conduction, these factors were carefully analysed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energydispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the strong deviations between observed and originally sought layout, this study highlights the robustness in terms of structural deviations of the double barrier memristor device.

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Section: Introductionmentioning

confidence: 87%

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

Strobel

Hansen

Dirkmann

et al. 2017

Journal of Applied Physics

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“…Together with the efforts to further enhance the crystallization for high-speed operation, [139] the crystallographic states of GST, especially the intermediate metastable crystalline phase, have been analyzed by monitoring the ratio of the amorphous and crystalline regions to realize a multilevel memory system. [151] One of the common intense THz sources is LiNbO 3 excited by tilted-pulse-front pumping. Intense THz pulses can reveal the details by manipulating the electron and lattice dynamics on the picosecond timescale.…”

Section: Gesbte (Gst)mentioning

confidence: 99%

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials

Jeong

Bahk

Kim

2019

Advanced Optical Materials

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Phase‐change phenomena have been an attractive research theme for decades due to the dynamic transition of material properties providing extraordinary capabilities for versatile optical device applications. Even at the terahertz (THz) frequency regime, phase‐change materials (PCMs) promote the development of dynamic devices, especially when combined with a plasmonic approach delivering strong field enhancement and localization. According to the design of plasmonic metamaterials or hybrid composites, PCMs can actively modulate the electromagnetic properties of THz waves through thermal, electrical, and optical means. In turn, THz waves can affect the PCM properties in the nonlinear regime due to the intense field strength enhancement by plasmonic structures. Here, a few types of PCMs demonstrating promising potential in THz plasmonic applications are introduced. Starting from the best‐known transition metal oxide, vanadium dioxide (VO2), which possesses an insulator‐to‐metal phase transition near room temperature, superconductors, chalcogenides, ferroelectrics, liquid crystals, and liquid metals are covered along with their phase‐change properties and the control mechanisms infused with THz plasmonic applications. The corresponding recent progress presenting how PCMs combined with plasmonic structures can demonstrate effective THz modulation is reviewed. This general overview may provide a better understanding of dynamic THz plasmonics and new ideas for future THz technology.

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“…However, with the advancements in the schemes of producing THz sources and its indispensable futuristic roles in understanding plethora of physical, chemical and biological processes, the THz Gap is firming its position as bridge between the fundamental sciences e.g. non-linear optics [2][3][4], condensed matter physics [5,6], non-linear spectroscopy [7], selective control of magnetic properties of materials [8] etc. and the real world applications like characterization of materials [9], non-invasive imaging [10], national security [11][12][13], THz communication [14], monitoring of industrial processes [15,16], biomedical applications [17] etc.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and simulation study of ‘Comb’ electron beam and THz generation

Joshi

Lehnert

Karmakar

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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A compact accelerator based super-radiant THz source is under development at Inter University Accelerator Centre (IUAC), New Delhi. The facility is based on the principle of pre-bunched Free Electron Laser (FEL) which will produce THz radiation in the range of ∼0.18 to 3 THz from a modulated electron beam. A photocathode electron gun will generate a short train of microbunches (a "comb" beam) driven by a fiber laser system capable of producing multi micro-pulse laser beam with variable separation ( "comb" laser pulse). Upon acceleration, the electron beam will be injected in to a compact undulator magnet tuned to the same frequency as the separation of the electron micro-bunches. The paper discusses the process of enhancement of super-radiant emission of radiation due to modulation in the comb beam and the conditions required to achieve maximum enhancement of the radiation power. The feasibility study of generating a comb beam at the photocathode and its transport through the beamline while preserving its temporal structure has been reported. To evaluate the characteristics of the radiation emitted from the comb beam, a C ++ based particle tracker and Liẽnard-Wiechert field solver has been developed. The conceptual understanding of the emission of radiation from comb beam is shown to conform with the numerical results. The code has been used to calculate the radiation pulse energy emitted into the central cone of undulator for various comb beam configurations.

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Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials

Cited by 65 publications

References 39 publications

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials

Theoretical and simulation study of ‘Comb’ electron beam and THz generation

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