Picosecond Joule heating in photoconductive switch electrodes

Vermeersch, Bjorn; Pernot, Gilles; Lü, Hong; Bahk, Je‐Hyeong; Gossard, A. C.; Shakouri, Ali

doi:10.1103/physrevb.88.214302

Cited by 9 publications

(7 citation statements)

References 33 publications

(59 reference statements)

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“…Joule heating in the low picosecond range has been experimentally demonstrated in photoconductive switch electrodes. 49 The latter result supports the claim of sufficiently fast Joule heating in order to reach the ultimate switching speed limit.…”

supporting

confidence: 76%

The ultimate switching speed limit of redox-based resistive switching devices

et al. 2019

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In contrast to classical charge-based memories, the binary information in redox-based resistive switching devices is decoded by a change of the atomic configuration rather than changing the amount of stored electrons. This offers in principle a higher scaling potential as ions are not prone to tunneling and the information is not lost by tunneling.The switching speed, however, is potentially smaller since the ionic mass is much higher than the electron mass. In this work, the ultimate switching speed limit of redoxbased resistive switching devices is discussed. Based on a theoretical analysis of the underlying physical processes, it is derived that the switching speed is limited by the phonon frequency. This limit is identical when considering the acceleration of the underlying processes by local Joule heating or by high electric fields. Electro-thermal simulations show that a small filamentary volume can be heated up in picoseconds.Likewise, the characteristic charging time of a nanocrossbar device can be even below ps. In principle, temperature and voltage can be brought fast enough to the device to reach the ultimate switching limit. In addition, the experimental route and the challenges towards reaching the ultimate switching speed limit are discussed. So far, the experimental switching speed is limited by the measurement setup.

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confidence: 76%

The ultimate switching speed limit of redox-based resistive switching devices

et al. 2019

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“…A mechanical delay line allows to vary the relative arrival times of the pump and probe pulses at the sample surface with picosecond resolution. Additional details and a schematic drawing of our measurement system are available elsewhere [29]. Standard mathematical manipulations of the single pulse response [27,30] provide theoretical model expressions for the in-phase V in (t pp ) and out-of-phase V out (t pp ) lock-in signal components at a given modulation frequency as a function of pump-probe delay t pp .…”

Section: Resultsmentioning

confidence: 99%

Superdiffusive heat conduction in semiconductor alloys. II. Truncated Lévy formalism for experimental analysis

et al. 2015

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Nearly all experimental observations of quasi-ballistic heat flow are interpreted using Fourier theory with modified thermal conductivity. Detailed Boltzmann transport equation (BTE) analysis, however, reveals that the quasi-ballistic motion of thermal energy in semiconductor alloys is no longer Brownian but instead exhibits Lévy dynamics with fractal dimension α < 2. Here, we present a framework that enables full 3D experimental analysis by retaining all essential physics of the quasi-ballistic BTE dynamics phenomenologically. A stochastic process with just two fitting parameters describes the transition from pure Lévy superdiffusion as short length and time scales to regular Fourier diffusion. The model provides accurate fits to time domain thermoreflectance raw experimental data over the full modulation frequency range without requiring any 'effective' thermal parameters and without any a priori knowledge of microscopic phonon scattering mechanisms. Identified α values for InGaAs and SiGe match ab initio BTE predictions within a few percent. Our results provide experimental evidence of fractal Lévy heat conduction in semiconductor alloys. The formalism additionally indicates that the transient temperature inside the material differs significantly from Fourier theory and can lead to improved thermal characterization of nanoscale devices and material interfaces.

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“…Alternatively, multiple filaments can be produced to share the current, which is performed by multiline triggering at high current levels for better device longevity [6,21]. Time-resolved laser thermal reflectance has been employed to investigate the picosecond-scale Joule heating of the photoconductive switch electrodes [22].…”

Section: Introductionmentioning

confidence: 99%

Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation

Xu¹,

Wang²,

Li³

et al. 2022

Plasma Sci. Technol.

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The bunching transport of photoexcited carriers in an GaAs photoconductive semiconductor switch (PCSS) with interdigitated electrodes is investigated under the femtosecond laser excitation. The continuous outputs featured with high-gain (HG) characteristic are obtained at single-shot and 1-kHz by varying the optical excitation energy. An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers. It demonstrates that the presence of plasma channel can be attributed to the bunching of high-density electron-hole pairs, which transports in the form of the high-density filamentary current. Results provide the pictures of the evolution of photoexcited carriers during the transient switching. The photoinduced heat effect is analyzed that reveals the relative failure mechanism at optical excitation at repetition rates.

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Picosecond Joule heating in photoconductive switch electrodes

Cited by 9 publications

References 33 publications

The ultimate switching speed limit of redox-based resistive switching devices

The ultimate switching speed limit of redox-based resistive switching devices

Superdiffusive heat conduction in semiconductor alloys. II. Truncated Lévy formalism for experimental analysis

Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation

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