Picosecond laser ablation and depth profile of Cu(In, Ga)Se2 thin film layer

Shi-Ming, Liu; Gao, Qing; Dong, Lili; Xiu, Junshan; Liu, Yunyan

doi:10.1016/j.optcom.2020.125369

Cited by 4 publications

(2 citation statements)

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“…Besides, the ZCTO thin film was ablated by the laser and interacted with the glass substrate when the ablation number was 5 times. In the previous study, the depth of single laser ablation under the same experimental conditions was 93 ± 13 nm [23], and the thickness of the ZCTO film was calculated to be approximately 372 ± 53 nm according to Eq. ( 1).…”

Section: Analysis Of Libs Spectrogrammentioning

confidence: 93%

“…Especially in the field of analysis of thin-film materials, a lot of achievements have been made on LIBS technology [18][19][20]. In our previous works, picosecond LIBS technology has been employed to conduct rapid element quantitative analysis and LIBS micro-analysis on Al-In-Sn-O thin films [21] and Cu(In, Ga)Se 2 thin films [22,23]. In this study, the picosecond LIBS method was adopted for rapid micro-analysis of ZCTO thin film, including picosecond LIBS method for thin-film thickness analysis and the rapid quantitative analysis method for element concentration ratio, to explore the feasibility of picosecond LIBS method in the preparation and evaluation of high-performance ZCTO thin film and further explore the relationship between LIBS analysis and the optical properties of thin-film materials.…”

Section: Introductionmentioning

confidence: 99%

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Rapid quantitative analysis and optical properties of ZCTO thin films based on picosecond laser-induced breakdown spectroscopy

Gao

Liu

et al. 2021

Appl. Phys. B

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The target element concentration ratios of Zn-Cr-Sn-O(ZCTO) thin films with different sputtering parameters prepared by radio frequency (RF) magnetron sputtering were analyzed by picosecond laser-induced breakdown spectroscopy (PS-LIBS). PS-LIBS method was employed to measure the thickness of the thin film in the depth profile of the ZCTO sample. The measured value of PS-LIBS is 372 ± 53 nm, presenting a small error with the actual value. The band gap of ZCTO thin-film samples is closely associated with the content ratio of the Sn element, which increases as sputtering power and sputtering pressure increase. As illustrated by comparing the relationship between the value of energy-dispersive X-ray spectroscopy (EDS) and transmittance, the band gap of ZCTO films increases with the increasing Sn/Zn content ratio. This can be represented by the LIBS spectral line of the corresponding element. Then, the Sn/Zn ratio of the films prepared under different sputtering parameters was quantitatively analyzed. The calibration curve of a single sputtering variable was obtained, while the rapid quantitative analysis of the Sn/Zn ratio based on multiple sputtering variables was realized. Moreover, the rapid micro-analysis of ZCTO films by the picosecond laser-induced breakdown spectroscopy method was realized using this method.

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Section: Analysis Of Libs Spectrogrammentioning

confidence: 93%