Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films
Qianchen Liu,
Tao Wei,
Yonghui Zheng
et al.
Abstract:Phase‐change random access memory is anticipated to break the bottleneck of the “storage wall” due to its advantages in simultaneous data storage and in‐memory computing. However, operation speed constrains its application scenarios. Antimony (Sb) thin film has ultrafast phase change speeds, low power consumption, and a straightforward chemical composition. In this study, silicon (Si) doping is employed to enhance the stability of pure Sb while achieving both ultrafast operational speeds and superior thermal s… Show more
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