Picosecond photoelectric characteristic in La0.7Sr0.3MnO3∕Si p-n junctions

Lü, Huibin; Jin, Kui-juan; Huang, Yuzhen; He, Meng; Zhao, Kun; Cheng, Buwen; Chen, Zhenghao; Zhou, Yueliang; Dai, Sou-yu; Yang, Ge

doi:10.1063/1.1946901

Cited by 99 publications

(55 citation statements)

References 13 publications

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“…In addition, there are reports of the photoelectric effect observed on heterojunctions of doped magnanites and doped silicon 24,25 and on a heterostructure 26 of Y Ba 2 Cu 3 O 7−x on Nb doped SrT iO 3 . Here, we demonstrate that in the case of narrow-gap Mott insulators the photovoltaic effect can lead to solar cells of high quantum efficiency, where a single solar photon can produce multiple electron-hole pairs.…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic effect for narrow-gap Mott insulators

Manousakis

2010

Phys. Rev. B

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We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited "hot" electron-hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy beyond the Mott-Hubbard gap to additional electrical energy by creating multiple electron-hole pairs in a time scale which can be shorter than the time characterizing other relaxation processes.

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Section: Introductionmentioning

confidence: 99%

Photovoltaic effect for narrow-gap Mott insulators

Manousakis

2010

Phys. Rev. B

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“…It was proposed that the "electronic reconstruction" and "oxygen vacancies" are essential for the fundamental mechanism underlying those fascinating phenomena at the oxide interfaces [5]. We also reported an unusual positive magnetoresistance (MR) in La 0.9 Sr 0.1 MnO 3 /SrNb 0.01 Ti 0.99 O 3 [8,9], ultrafast photoelectric effects in La 0.7 Sr 0.3 MnO 3 /Si, LaAlO 3−δ / Si and La 0.9 Sr 0.1 MnO 3 /SrNb 0.01 Ti 0.99 O 3 [10][11][12], resistance switching in BaTiO 3 /Si [13], the Dember effect of induced photovoltages in La 0.9 Sr 0.1 MnO 3 /SrNb 0.01 Ti 0.99 O 3 and La 0.7 -Sr 0.3 MnO 3 /Si [14], electrical modulation of the MR in multi-p-n hererostructures of SrTiO 3−δ /La 0.9 Sr 0.1 MnO 3 /SrTiO 3−δ /La 0.9 Sr 0.1 MnO 3 /Si [15], as well as enhanced tunability in La 0.7 Sr 0.3 MnO 3 /BaTiO 3 [16]. These results mentioned above have demonstrated that these novel properties have a dominating contribution from the interfacial effect in oxide heterostructures or the interface competition effect in multi-heterostructures.…”

Section: Introductionmentioning

confidence: 89%

High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3−δ/Si heterojunction

Wen

Guo

Xing

et al. 2010

Sci. China Phys. Mech. Astron.

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A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO 3−δ and p-type Si fabricated by laser molecular beam epitaxy. The responsivity of open-circuit photovoltage can reach 10 4 V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order. We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO 3−δ /Si heterojunction. From the experimental results, some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si. SrTiO 3−δ /Si heterojunction, interfacial photoelectric effect, photovoltage PACS: 78.66.Li, 73.40.Lq, 85.60.Gz

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“…On the practical applications of doped manganese oxides, there is of great interest in manganite-based magnetic heterostructures [2][3][4][5][6][7] due to the fact that the electrical and magnetic properties of manganite-based heterostructures can be effectively modulated by external electrical/magnetic field and light signals [5,8,9]. The doped manganite La 1 À x Sr x MnO 3 possesses diverse physical phenomena ascribed to strong electron-correlated interaction among spin, charge, and/or orbital degree of freedom.…”

Section: Introductionmentioning

confidence: 99%