Picosecond pulse generation from passively modelocked vertical cavity diode laser at up to 15 GHz pulse repetition rate

Jasim, Khalil Ebrahim; Zhang, Q.; Nurmikko, A. V.; Ippen, Erich P.; Mooradian, A.; Carey, Glen P.; Ha, Wonill

doi:10.1049/el:20040024

Cited by 50 publications

(43 citation statements)

References 6 publications

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“…This approach was used before to achieve modelocking in vertical-cavity devices (Jasim et al, 2004). In Genevet et al (2008) a cavity with two intra-cavity telescopes is used to image the active zones of two broad-area VCSELs onto each other with a magnification of 1.…”

Section: Experimental Realization Using Face-to-face Vcselsmentioning

confidence: 99%

Chapter 6 Fundamentals and Applications of Spatial Dissipative Solitons in Photonic Devices

Ackemann

Firth

Oppo

2009

Advances in Atomic, Molecular, and Optical Physics

212

184

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We review the properties of optical spatial dissipative solitons (SDS). These are stable, self-localized optical excitations sitting on a uniform, or quasi-uniform, background in a dissipative environment like a nonlinear optical cavity. Indeed in optics they are often termed 'cavity solitons'. We discuss their dynamics and interactions in both ideal and imperfect systems, making comparison with experiments. SDS in lasers offer important advantages for applications. We review candidate schemes and the tremendous recent progress in semiconductor-based cavity soliton lasers. We examine SDS in periodic structures, and we show how SDS can be quantitatively related to the locking of fronts. We conclude with an assessment of potential applications of SDS in photonics, arguing that best use of their particular features is made by exploiting their mobility, e.g. in all-optical delay lines.

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Section: Experimental Realization Using Face-to-face Vcselsmentioning

confidence: 99%

Chapter 6 Fundamentals and Applications of Spatial Dissipative Solitons in Photonic Devices

Ackemann

Firth

Oppo

2009

Advances in Atomic, Molecular, and Optical Physics

212

184

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“…Despite the impressive cw performance of these devices, modelocking results have been limited to 40 mW of average output power with 57-ps pulses [15] and some tens of milliwatts with 15-ps pulses [16].…”

Section: Introductionmentioning

confidence: 99%

Gain characterization and passive modelocking of electrically pumped VECSELs

Pallmann¹,

Zaugg²,

Mangold³

et al. 2012

Opt. Express

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Linear and nonlinear gain characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) is presented with spectrally resolved measurements of the gain and with gain saturation measurements of two EP-VECSEL samples with different field enhancement in the quantum-well gain layers. The spectral bandwidth, small-signal gain and saturation fluence of the devices are compared. Using the sample with the larger bandwidth, we have demonstrated the shortest pulses generated from a passively modelocked EP-VECSEL to date. With a low-saturation-fluence SESAM for passive modelocking we have achieved 9.5-ps pulses with 7.6 mW average output power at a repetition rate of 1.4 GHz. With a higher output coupler transmission the pulse duration was increased to 31 ps with an average output power of 13.6 mW. The pulses were chirped mainly due to the group delay dispersion (GDD) introduced by the intermediate DBR, which compensates the optical loss in the structure.

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“…The authors observed that the long pulses resulted from spectral filtering in the high finesse cavity around the active region. More recently, Jasim et al [30] have used the same gain structure to generate 15-ps pulses at repetition rates up to 15 GHz. The SESAM in this device was a reverse-biased InGaAs multiple quantum well structure, and a microlens was used to couple the gain and absorber structures within the short plane/plane cavity, ensuring circular TEM 00 output.…”

Section: Ultrashort Pulse Generationmentioning

confidence: 99%

Vertical-external-cavity semiconductor lasers

Tropper¹,

Foreman²,

Garnache³

et al. 2004

J. Phys. D: Appl. Phys.

183

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Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. The purpose of this Topical Review is to outline the operating principles of these versatile lasers and summarize the capabilities of devices that have been demonstrated so far. Particular attention is paid to the generation of near-transform-limited sub-picosecond pulses in passively mode-locked surface-emitting lasers, which are potentially of interest as compact sources of ultrashort pulses at high average power that can be operated readily at repetition rates of many gigahertz.

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Picosecond pulse generation from passively modelocked vertical cavity diode laser at up to 15 GHz pulse repetition rate

Cited by 50 publications

References 6 publications

Chapter 6 Fundamentals and Applications of Spatial Dissipative Solitons in Photonic Devices

Chapter 6 Fundamentals and Applications of Spatial Dissipative Solitons in Photonic Devices

Gain characterization and passive modelocking of electrically pumped VECSELs

Vertical-external-cavity semiconductor lasers

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