Picosecond pulse generation with a cw GaAlAs laser diode

Ho, P.‐T.; Glasser, L.A.; Ippen, Erich P.; Haus, H.A.

doi:10.1063/1.90312

Cited by 208 publications

(21 citation statements)

References 8 publications

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“…However, due to mode competition, it is difficult to achieve stable lasing for all wavelengths using regular III/V quantum well (QW) based lasers. Mode-locked lasers, either actively locked [41], [42] or passively locked [43], [44], can, in fact, generate stable wavelength comb [45], [46]. However, they typically are not power efficient; i.e.…”

Section: A Wdm Silicon Photonic Link Configurationmentioning

confidence: 98%

Efficient WDM Laser Sources Towards Terabyte/s Silicon Photonic Interconnects

Zheng

Lin

Luo

et al. 2013

J. Lightwave Technol.

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Efficient multi-wavelength sources are essential to realize sub-pJ/bit modulated silicon photonic links for multi-TB/s interconnect applications. From a complete link perspective, we discuss the efficiency requirement for silicon WDM on-chip sources. A waveguide-coupled wall-plug efficiency (WPE) better than 10% is important to complement ultra-low power silicon photonic components for practical implementations. We propose a non-invasive hybrid, flip-chip integration approach using surface-normal coupling of an un-cooled III/V gain medium with a tunable wavelength selective silicon reflector. We show that a tunable, external-cavity WDM laser using such a hybrid integration approach can achieve high waveguide-coupled WPE when optimized. A proof-of-concept demonstration achieved a C-band tunable laser with an output power of more than 6 mW in the silicon waveguide, a tuning range of 15 nm, and a WPE of over 4.5%.

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Section: A Wdm Silicon Photonic Link Configurationmentioning

confidence: 98%

Efficient WDM Laser Sources Towards Terabyte/s Silicon Photonic Interconnects

Zheng

Lin

Luo

et al. 2013

J. Lightwave Technol.

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“…The first mode-locked semiconductor laser in AlGaAs was demonstrated by P. T. Ho in 1978 [34]. Since then, the pulse widths of mode-locked semiconductor lasers have dropped from 30 ps down to 1 ps [1,3,35].…”

Section: Mode-locked Semiconductor Lasermentioning

confidence: 99%

Semiconductor mode-locked lasers as pulse sources for high bit rate data transmission

2005

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Semiconductor mode-locked lasers are evaluated as pulse sources for high bit rate data transmission. This chapter describes the requirements of OTDM sources for high bit rate data transmission, compares various OTDM source technologies, describes three semiconductor mode-locked laser cavity designs, explains the impact of timing jitter and amplitude noise on OTDM performance, illustrates how to characterize noise of OTDM sources using rf and optical techniques, shows how to interpret the noise measurements, and finally discusses semiconductor mode-locked laser cavity optimizations that can achieve low noise performance.A critical part of the design of a communication system is the choice of the transmitter or source laser. High bit rate optical time-division multiplexed (OTDM) systems in particular demand reliable short pulse generation at high repetition rates and turn-key operation. Semiconductor mode-locked lasers are becoming increasingly attractive and viable for such applications.Semiconductor mode-locked lasers can be compact sources of picosecond, highrepetition rate pulses of light at the popular telecommunication wavelength of 1.5 μm [1,2]. Recent advances in semiconductor processing and cavity design have led to the advent of ultra-stable [3] and ultralow-noise [4,5] performance. With proper temperature control of the semiconductor device and a clean electric supply for the bias and injection current, the diode can remain mode-locked for days. Single-channel, singlepolarization transmission rates up to 160 Gb/s [6] have been successfully demonstrated using mode-locked semiconductor lasers, and detailed characterization of their noise

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“…In a gain-switched device [1][2]4], laser action takes place between the two end facets of the semiconductor chip ; strong periodic modulation is applied to the injection current, causing a train of repetitive `gain-switched' laser pulses to be emitted . In the case of active mode-locking on the other hand [1][2][3]5], laser action occurs in an extended cavity formed between the chip and an external mirror ; the transit time of the extended cavity must accurately match the period of the injection current .…”

Section: Introductionmentioning

confidence: 99%