Piezo-phototronic effect regulated broadband photoresponse of a-Ga₂O₃/ZnO heterojunction

Abstract

Amorphous Ga2O3 (a-Ga2O3) films have attracted considerable attention in the field of photodetectors due to their excellent optical absorption response and photoelectric properties. However, there are few studies utilizing the...

The Influence of Temperature on the Photoelectric Properties of GeSe Nanowires

“…R = (I ph − I d )/(P 0 A), where R signifies the photoresponsivity, indicative of the photoelectric current generated per unit power of incident light at a designated wavelength across the device area [34,35]. In this context, I ph represents the photocurrent under laser exposure, I d denotes the dark current, A is the illuminated region of the GeSe device microstructure (−0.01 cm 2 ), and P 0 is the optical power density, recorded at 9.94 mW/cm 2 [36,37]. The dark currents of different GeSe photodetector devices prepared at 500 • C, 530 • C, 560 • C, 590 • C, and 620 • C are 0.350 nA, 47.5 nA, 53.45 nA, 10.15 nA, and 0.232 nA, respectively.…”

2D Ti3C2-MXene Nanosheets/ZnO Nanorods for UV Photodetectors

“…ZnO, in contrast to prior generations of semiconductors like Si, germanium (Ge), gallium arsenide (GaAs), and indium antimonide (InSb), exhibits a broad band gap and improved carrier mobility and stability, rendering it a highly attractive material for UV PDs. − Among the various ZnO nanostructures, 1D ZnO arrays have the advantages of large ratios of surface areas to volumes, high breakdown electric field and electron saturation rate, and short efficient pathways for charge carrier transport. − The 1D ZnO arrays PDs still suffer from low photoresponsivity and a long response time (seconds to minutes) because of high carrier recombination rates. , In recent years, inorganic semiconductors (TiO 2 , GaN, , and Si), organic semiconductors (PEDOT and P3HT), two-dimensional nanomaterials (rGO), and other materials are combined with a 1D ZnO nanorods array to form the p–n or n–n heterojunctions or Schottky junctions. The corresponding built-in electric fields can be effectively generated to improve the separation and transportation rate of optical carriers. − There are some challenges that must be addressed, including the high cost and intricate manufacturing procedures of inorganic semiconductors, limited stability, and variable effects of temperature and humidity on the organic semiconductors.…”