Piezoelectric and functional properties of materials with coexisting ferroelectric and antiferroelectric phases

Ishchuk, V. M.; Kuzenko, D. V.; Sobolev, V. L.

doi:10.3934/matersci.2018.4.711

Cited by 7 publications

(5 citation statements)

References 19 publications

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“…Due to its valuable properties, the ferroelectric PbZr 1-x Ti x O 3 (PZT) oxide is currently considered as the most relevant ferroelectric material for many applications [4]. However, its well-known toxicity leads to an important effort of the scientific community to investigate lead-free alternative solutions.…”

Section: Introductionmentioning

confidence: 99%

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Aspe

Castel

Demange

et al. 2021

Journal of Alloys and Compounds

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K 0.5 Na 0.5 NbO 3 thin films were deposited by pulsed laser deposition on (100)MgO substrates for microwave device applications. A fine epitaxial growth of pure perovskite phase was evidenced by X-ray diffraction. Dielectric characterizations were performed from 1 to 40 GHz using coplanar microwave devices printed on the 500 nm-thick K 0.5 Na 0.5 NbO 3 thin films. Dielectric permittivity  r = 355 and loss tangent tanδ = 0.35 at 10 GHz were retrieved without biasing. A comparison of the results with those retrieved from the resonant cavity J o u r n a l P r e -p r o o f 2 method (to characterize as-deposited films) showed no deleterious influence neither from the device patterning nor the thin film-device interface. A frequency tunability up to 22% was measured under a moderate external DC bias electric field E bias = 94 kV/cm. Temperature measurements from 20 to 240°C exhibited a permittivity increase up to  r = 975 coupled to a loss decrease tanδ = 0.25 at 10 GHz. According to such measurements, an orthorhombictetragonal phase transition was evidenced close to 220°C with an increase of the frequency tunability up to 34%. Comparison of the properties of such films with those grown on R-plane sapphire substrates demonstrated the benefit brought by the epitaxial growth of K 0.5 Na 0.5 NbO 3 films on (100) MgO.

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Section: Introductionmentioning

confidence: 99%

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Aspe

Castel

Demange

et al. 2021

Journal of Alloys and Compounds

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“…For decades, the PbZr 1-x Ti x O 3 -based (PZT) material has been the most popular ferroelectric materials [4]. Lately an effort has been made by the scientific community to find a more ecologic and less toxic alternative to this material.…”

Section: Introductionmentioning

confidence: 99%

Tetragonal tungsten bronze phase thin films in the K–Na–Nb–O system: Pulsed laser deposition, structural and dielectric characterizations

Aspe

Demange

Waroquet

et al. 2020

Journal of Alloys and Compounds

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Pulsed laser deposition parameters have been determined to synthesize pure Tetragonal Tungsten Bronze (TTB) phase thin films in the (K , Na)-Nb-O system (KNN). In relation to the high volatility of alkaline elements, it was found that the target composition and the targetsubstrate distance are of first importance. The TTB phase was identified by X-ray and electron diffraction and the surface microstructure consisting mainly of nanorods supports the formation of hallmark of the TTB phase. Poly-oriented nanorods have been obtained on both C-plane sapphire and (111)Pt/TiO 2 /SiO 2 /(001)Si substrates whereas horizontal nanorods oriented along the (hk0) planes have been grown on (100) and (110) SrTiO 3. All the nanorods are parallel together when grown on (110) SrTiO 3 and they present two in-plane orientations rotated of 90° from each other on (100) SrTiO 3. Dielectric characteristics (dielectric permittivity ε r , and loss tangent tanδ) have been measured at low (1 kHz-1 MHz) and high (1 GHz-40 GHz) frequencies, on films deposited on Pt coated silicon and sapphire, respectively. A value of ε r = 200 at 1 kHz with tanδ = 0.015 were measured in a parallel plate capacitor configuration, whereas ε r = 130 and tanδ = 0.20 at 10 GHz were retrieved from transmission lines printed on the KNN TTB thin film grown on C-plane sapphire. Raman investigations of the TTB films were performed in the temperature range 77-873 K, confirming the TTB phase formation and the absence of structural transition. Piezoelectric Force Microscopy measurements evidenced a piezoelectric signal although no switching could be performed. However the dielectric measurements, complicated by high leakage currents when a DC voltage was applied, did not evidence any proof of ferroelectricity for the undoped KNN TTB films whereas results reported on other niobates (A,A') 0.6 Nb 10 O 30 (with A: K, Na and A': Sr, Ba, Ca) have shown Curie temperatures, lying between 156°C and 560°C, separating the paraelectric phase (space group: P4/mbm N°127) and the ferroelectric one (space group: P4bm N°100).

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“…The resulting AFE structures are often INC and/or frustrated, inducing relaxor-like behavior. [161][162][163][164][165][166][167] Figure 19 shows examples of phase boundary with La doping batched according to ionic compensation in the form Pb 1 − 3x/2 La x (Zr 1 − y Ti y ) O 3 . 168 Many of the AFE-FE materials within the perovskites F I G U R E 1 6 AgNbO 3 crystal structure at room temperature, after Levin et al 157 (A) Shows the average structure, illustrating quadrupling along the c lattice parameter due to a complex tilt structure.…”

Section: Other Afe Solid Solutionsmentioning

confidence: 99%

“…drive the material to a more diffuse phase transition. The resulting AFE structures are often INC and/or frustrated, inducing relaxor‐like behavior 161–167 . Figure 19 shows examples of phase boundary with La doping batched according to ionic compensation in the form Pb 1 − 3x/2 La x (Zr 1 − y Ti y )O 3 168 .…”

Section: Crystal Structures and Crystallography Of Afesmentioning

confidence: 99%

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

et al. 2021

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Antiferroelectric (AFE) materials are of great interest owing to their scientific richness and their utility in high-energy density capacitors. Here, the history of AFEs is reviewed, and the characteristics of antiferroelectricity and the phase transition of an AFE material are described. AFEs are energetically close to ferroelectric (FE) phases, and thus both the electric field strength and applied stress (pressure) influence the nature of the transition. With the comparable energetics between the AFE and FE phases, there can be a competition and frustration of these phases, and either incommensurate and/or a glassy (relaxor) structures may be observed. The phase transition in AFEs can also be influenced by the crystal/grain size, particularly at nanometric dimensions, and may be tuned through the formation of solid solutions. There have been extensive studies on the perovskite family of AFE materials, but many other crystal structures host AFE behavior, such as CuBiP 2 Se 6 . AFE applications include DC-link capacitors for power electronics, defibrillator capacitors, pulse power devices, and electromechanical actuators. The paper concludes with a perspective on the future needs and opportunities with respect to discovery, science, and applications of AFE. K E Y W O R D S applications, dielectric materials/properties, ferroelectricity/ferroelectric materials, phase transition F I G U R E 3 Antiferroelectric double hysteresis loops in (A) Pb(Lu 0.5 Nb 0.5 )O 3 and (B) the temperature-dependent critical field in it (replotted from Ref. [30]). (C) shows the phase diagram of PbZrO 3 as a function of temperature and electrical field (replotted from Ref.

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Piezoelectric and functional properties of materials with coexisting ferroelectric and antiferroelectric phases

Cited by 7 publications

References 19 publications

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Tetragonal tungsten bronze phase thin films in the K–Na–Nb–O system: Pulsed laser deposition, structural and dielectric characterizations

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

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