2020
DOI: 10.1038/s41586-020-2602-4
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Piezoelectric and pyroelectric effects induced by interface polar symmetry

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Cited by 185 publications
(161 citation statements)
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References 36 publications
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“…The other is from the heterointerface polar asymmetry, which is ubiquitous among heterostructures to trigger pyroelectricity and piezoelectricity. [ 40–45 ] The resulting piezopotential is maintained as long as the film is deformed, lending to the constant upward band bending at the interface, as shown in Figure 7b. Upon the light exposure, the photon‐excited electrons are separated and migrate across the ZnO/2D α‐C:H interface, leading to a substantially increased electron density within the ZnO film.…”
Section: Resultsmentioning
confidence: 93%
“…The other is from the heterointerface polar asymmetry, which is ubiquitous among heterostructures to trigger pyroelectricity and piezoelectricity. [ 40–45 ] The resulting piezopotential is maintained as long as the film is deformed, lending to the constant upward band bending at the interface, as shown in Figure 7b. Upon the light exposure, the photon‐excited electrons are separated and migrate across the ZnO/2D α‐C:H interface, leading to a substantially increased electron density within the ZnO film.…”
Section: Resultsmentioning
confidence: 93%
“…9 Under these conditions, the most likely mechanisms for free carrier strain generation are either through carrier deformation coupling 31 or through an inverse-piezoelectric effect 46 caused by VB hole accumulation near the surface and the aforementioned surface piezoelectric effect. 65 We speculate that, if VB holes do significantly contribute to the strain, it would be dominated by the inverse-piezoelectric effect because carrier deformation coupling is likely weak, as shown by the comparatively weak OC strain. While the above mechanisms are possible, we emphasize that the strong correlation of strain with the holepolaron population suggests that polaronic distortion is the primary driver.…”
Section: Discussionmentioning
confidence: 91%
“…32 Two mechanisms exist for the electron-phonon case in particular: through the deformation potential to form an acoustic polaron, 63 and through the piezoelectric effect to form a piezoelectric polaron. 64 Normally, piezoelectricity is symmetry forbidden in room temperature STO because it is centrosymmetric, but the recent discovery of a surface piezoelectric effect induced by interfacial electric fields 65 and surface relaxation 66 indicates that such an effect is present, possibly to a large extent, at the STO/water interface. It is also worth noting that such a surface piezoelectric effect has been associated with perovskite octahedra rotation, 67 which could reduce the effects of strain on OER activity.…”
Section: Discussionmentioning
confidence: 99%
“…A small piezoelectric response is expected for DDT because SAMs contain an interface and are, therefore, inherently piezoelectric. [30] A maximum value of (9.8 ± 1.5) pC N −1 is obtained for the assembly consisting of amide-terminated CA 6 functionalized PCBs opposing PU coated DDT functionalized PCBs (CA6-NH2/DDT-PU). On average, peak current values of 80 pA-100 pA were observed at the maximum applied force of ∼6 N. On average, the PSAM device assemblies had a resistance of (56.9 ± 1.8) MΩ and a capacitance (measured at ∼0.7 MHz) of (428 ± 14) pF; the only observed trend is that, generally, the capacitance slightly increased with increased chain length.…”
Section: Sams Of Thiol-containing Oligopeptides Ranging In Length Frmentioning
confidence: 94%