Abstract:, L.M.; Fridkin, V.M.; Palto, S.P.; Petukhova, N.N.; and Yudin, S.G., "Piezoelectric and pyroelectric properties of ferroelectric Langmuir-Blodgett polymer films" (1999 The piezoelectric and pyroelectric responses of ferroelectric Langmuir-Blodgett polymer films are less than the largest values measured with bulk films of the same composition. The films of the crystalline copolymer poly͑vinylidene fluoride trifluoroethylene͒ fabricated by the LangmuirBlodgett technique are 30 ML thick ͑15 nm͒ and are highly cr… Show more
“…1. The time of switching varied from 1 to 10 s, so hysteresis loops were recorded by quasistatic pyroelectric [19,20] and capacitance [17] methods. The remanent polarization hysteresis loop measured by the Chynoweth pyroelectric method [19] at 25 ± C on a 30-ML is shown in Fig.…”
“…1. The time of switching varied from 1 to 10 s, so hysteresis loops were recorded by quasistatic pyroelectric [19,20] and capacitance [17] methods. The remanent polarization hysteresis loop measured by the Chynoweth pyroelectric method [19] at 25 ± C on a 30-ML is shown in Fig.…”
“…Sample capacitance was measured with an impedance analyzer (HP 4192A) operating at 1 kHz with 0.1 V amplitude. The pyroelectric response of the capacitors, which is proportional to the net polarization, 15 was measured at zero bias by modulating the sample temperature with a 6 mW helium-neon laser beam modulated at 2 kHz, and recording the ac pyroelectric current from the sample with a lock-in amplifier.…”
Section: Department Of Physics and Astronomy And Center For Materialsmentioning
We report the fabrication and characterization of nanoscale ferroelectric structures consisting of disk-shaped nanomesas averaging 8.7±0.4nm in height and 95±22nm in diameter, and nanowells 9.8±3.3nm in depth and 128±37nm in diameter, formed from Langmuir–Blodgett films of vinylidene fluoride copolymers after annealing in the paraelectric phase. The nanomesas retain the ferroelectric properties of the bulk material and so may be suitable for use in high-density nonvolatile random-access memories, acoustic transducer arrays, or infrared imaging arrays. The nanomesa and nanowell patterns may provide useful templates for nanoscale molding or contact-printing.
“…There is evidence of a saturation of E c to its intrinsic value for very thin films, attributed to the suppression of switching nucleation and domain growth. 12 The switching in the thinnest films was found to be slow, in the range of seconds, 13,16 in sharp contrast to the microsecond switching times typical with much thicker films formed by solvent spinning. 24 Such a significant difference may be caused by suppression of nucleation or domain-wall motion.…”
Section: Introductionmentioning
confidence: 96%
“…The pyroelectric response of the LB films of the 70:30 P͑VDF/TrFE͒ copolymer does not differ much from much thicker solvent-formed films. 16 The stable polarization reversal was found even in thinnest films down to few transferred layers ͑Ͻ10 nm͒, showing no evidence of suppression of ferroelectricity by finite-size effects. 22 The LB films also have relatively high coercive field E c of the order of 100 MV/ m, increasing with decreasing thickness.…”
Section: Introductionmentioning
confidence: 99%
“…Another one, also proportional to the net polarization, arises from the secondary pyroelectric effect, which is the piezoelectric charge generated by the strain due to thermal expansion, and is influenced by constraints, such as the rigidity of the substrate. 15,16 Because both primary and secondary pyroelectricity are proportional to P s and , they need not be separated in the polarization reversal studies. In the PVDF family polymers with their complex morphology, a few other potential sources of current should be noted.…”
The ferroelectric switching in Langmuir-Blodgett films of poly͑vinylidene fluoride trifluoroethylene͒ is studied. The films have a distribution of switching times several decades wide. Nearly a half of the film volume may be switched faster than 1 ms, though complete switching of a whole sample may require 100 s or more. The switching occurs through a domain nucleation and growth mechanism. The decay of polarization at zero bias is logarithmic in time, with a constant rate below 5% per decade at room temperatures. The coercive voltage may be as low as 5 V, which makes the films promising for use in nonvolatile random-access data storage.
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