Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Chu, S. N. G.; Ren, F.; Pearton, S. J.; Kang, B. S.; Kim, S.; Gila, B. P.; Abernathy, C. R.; Chyi, Jen Inn; Johnson, Wayne; Lin, Jenshan

doi:10.1016/j.msea.2005.05.119

Cited by 19 publications

(5 citation statements)

References 13 publications

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“…In addition, the aforementioned piezoresistors often require a controlled environment for operation (high vacuum and/or low temperature), and face challenges in terms of repeatability and consistency (especially those based on nanoscale materials). Only a handful of studies have been reported on the piezoresistive properties of 2DEG formed at the AlGaN/GaN interface 20 23 43 44 45 . In the earlier works, the III-Nitride epilayers studied were grown on sapphire substrate 23 43 44 45 , which could not be etched, therefore application of strain on the epilayers was cumbersome and difficult to estimate accurately.…”

Section: Resultsmentioning

confidence: 99%

“…Only a handful of studies have been reported on the piezoresistive properties of 2DEG formed at the AlGaN/GaN interface 20 23 43 44 45 . In the earlier works, the III-Nitride epilayers studied were grown on sapphire substrate 23 43 44 45 , which could not be etched, therefore application of strain on the epilayers was cumbersome and difficult to estimate accurately. In addition, the sensing elements were in the form of simple AlGaN/GaN piezoresistors where gate control was either absent or unoptimized.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the sensing elements were in the form of simple AlGaN/GaN piezoresistors where gate control was either absent or unoptimized. The combined effect of these two factors led to GF values <100 (refs 20 , 23 , 43 , 44 , 45 ). Our design takes advantage of high quality epilayers that are currently synthesized on Si wafers, and utilizes and optimized biasing schemes for the HFET at the base of a microcantilever, resulting in ultra-high sensitivity.…”

Section: Resultsmentioning

confidence: 99%

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Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy

et al. 2015

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Measurement of femtoscale displacements in the ultrasonic frequency range is attractive for advanced material characterization and sensing, yet major challenges remain in their reliable transduction using non-optical modalities, which can dramatically reduce the size and complexity of the transducer assembly. Here we demonstrate femtoscale displacement transduction using an AlGaN/GaN heterojunction field effect transistor-integrated GaN microcantilever that utilizes piezoelectric polarization-induced changes in two-dimensional electron gas to transduce displacement with very high sensitivity. The piezotransistor demonstrated an ultra-high gauge factor of 8,700 while consuming an extremely low power of 1.36 nW, and transduced external excitation with a superior noise-limited resolution of 12.43 fm Hz−1/2 and an outstanding responsivity of 170 nV fm−1, which is comparable to the optical transduction limits. These extraordinary characteristics, which enabled unique detection of nanogram quantity of analytes using photoacoustic spectroscopy, can be readily exploited in realizing a multitude of novel sensing paradigms.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy

et al. 2015

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“…In this case it does not require a patterning of the functional group III nitride film. ICP etching with SF 6 /Ar was employed to fabricate AlGaN/GaN membranes with a confined 2DEG for pressure sensors [382][383][384]. Here the GaN layer acts effectively as an etch stop (figure 17).…”

Section: 35mentioning

confidence: 99%

“…However, the manufacture of applicable sensors requires micromachining to realize freestanding membranes containing the AlGaN/GaN heterostructure. This was achieved by epitaxial deposition onto Si substrates and etching of circular holes from the backside [382][383][384]. Figure 17(b) shows the concept of such devices with interdigitated finger pattern.…”

Section: Group III Nitride Membranesmentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

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With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

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GaN and ZnO freestanding micromechanical structures on silicon‐on‐insulator substrates

Tripathy

Vicknesh

Wang

et al. 2008

Physica Status Solidi (a)

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Using a combination of selective dry etching techniques, surface micro‐machined GaN and ZnO micromechanical structures are demonstrated on silicon‐on‐insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pulse etching with non‐plasma xenon difluoride (XeF2), which selectively etches the Si overlayer of SOI, thus undercutting the wide bandgap semiconductor material on top. This method prevents crystal damage of overhanging wide bandgap semiconductor mechanical structures. The mechanical properties of these released microstructures are characterized by micro‐Raman spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Cited by 19 publications

References 13 publications

Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy

Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

GaN and ZnO freestanding micromechanical structures on silicon‐on‐insulator substrates

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