Piezoelectric properties of PZT films prepared by the sol–gel method and their application in MEMS

Xiong, Shijiao; Kawada, Hiroshi; Yamanaka, Hiroshi; Matsushima, Toshiya

doi:10.1016/j.tsf.2007.07.085

Cited by 24 publications

(11 citation statements)

References 10 publications

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“…Maximum e 31,f reported for (100) oriented PZT without gradient compensation was -15 C/m 2 [20]. For (111) oriented PZT, maximum e 31,f was -12 C/m 2 [21]. The difference of e 31,f in function of PZT orientation is lower for e 31,f measurement than for d 31 measurement.…”

Section: Introductionmentioning

confidence: 85%

Influence of the crystallographic orientation of Pb(Zr,Ti)O<inf>3</inf> films on the transverse piezoelectric coefficient d<inf>31</inf>

Cueff

Allain

Abergel

et al. 2011

2011 IEEE International Ultrasonics Symposium

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In this paper, we present the fabrication of micro cantilevers and the extraction of the transverse piezoelectric coefficient d 31 . Micro cantilevers were fabricated on SOI wafers by surface micromachining processes. By controlling the crystallization conditions, 2 µm-thick (100) and (111) highly oriented PZT films were obtained. Piezoelectric properties were compared according to two crystalline orientations. A model was adapted to extract d 31 from deflection measurements. The interest of this d 31 extraction is that the piezoelectric coefficient is performed in actual conditions of actuation.

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Section: Introductionmentioning

confidence: 85%

Influence of the crystallographic orientation of Pb(Zr,Ti)O<inf>3</inf> films on the transverse piezoelectric coefficient d<inf>31</inf>

Cueff

Allain

Abergel

et al. 2011

2011 IEEE International Ultrasonics Symposium

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“…Due to their high piezoelectric properties [6], PZT films are used in energy harvesters [7]. PZT films are formed by the method of high-frequency reactive plasma sputtering [8], a sol-gel method [9] of pulsed laser deposition [10].…”

Section: Introductionmentioning

confidence: 99%

Harvester of Energy on Pb(Zr, Ti)O3 Thin Films

Petrov

2018

5th International Electronic Conference on Sensors and Applications

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The design was developed and investigated, and a laboratory sample of energy harvester based on 1–1.5 μm thick lead zirconate titanate Pb(Zr, Ti)O3 (PZT) films was assembled. PZT films were formed on oxidized silicon by high-frequency reactive plasma sputtering in the oxygen atmosphere. The laboratory sample of the energy harvester was sensitive to mechanical acceleration and vibration. Testing of sensors on a special electrodynamic stand showed that the sensor has a high sensitivity in the frequency range from 2–5 Hz with a sensitivity of up to 75 pС/g, which corresponds to a sensitivity of 1.2–1.5 V/g. The same design of the energy harvester was sensitive to scattered electromagnetic energy with a sensitivity of 6.8 10−4 V/(V/cm). The maximum response to the electromagnetic field was observed at a frequency of 100−200 Hz.

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“…Micro-electromechanical systems (MEMS) have been developing rapidly for a wide variety of applications in the last decade. A wide range of materials have been used in the design and fabrication of MEMS devices and many advanced microfabrication techniques have been developed [1][2][3][4][5]. However, most of the reported piezoelectric MEMS devices are based on lead zirconate titanate (PZT).…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of a novel magnetoelectric multiferroic MEMS cantilevers on Si

Prashanthi

Mandal

Duttagupta

et al. 2011

Sensors and Actuators A: Physical

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Piezoelectric properties of PZT films prepared by the sol–gel method and their application in MEMS

Cited by 24 publications

References 10 publications

Influence of the crystallographic orientation of Pb(Zr,Ti)O<inf>3</inf> films on the transverse piezoelectric coefficient d<inf>31</inf>

Influence of the crystallographic orientation of Pb(Zr,Ti)O<inf>3</inf> films on the transverse piezoelectric coefficient d<inf>31</inf>

Harvester of Energy on Pb(Zr, Ti)O3 Thin Films

Fabrication and characterization of a novel magnetoelectric multiferroic MEMS cantilevers on Si

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