Piezooptical Properties of GaAs and InP

Theodorou, G.; Tsegas, George

doi:10.1002/(sici)1521-3951(199902)211:2<847::aid-pssb847>3.0.co;2-2

Cited by 11 publications

(4 citation statements)

References 20 publications

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“…The values of the scaling indices ␣,␤ and the orbital spitting parameter b p are determined in such a way as to obtain the best values for the ⌫-point deformation potentials. The optimal set for the scaling parameters, consistent with previous results for III-V compounds, 34 was found to be ss ϭ4, sp ϭ2, and pp ϭ2, for both materials, with the internal strain parameter 35 taken equal to 1 and the orbital splitting parameter b p equal to 0, 2, 0.5, and 0.5 eV for As, In, Sb, and Al ions, respectively.…”

Section: Methodssupporting

confidence: 82%

Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices

Theodorou

Tsegas

2000

Phys. Rev. B

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An empirical tight-binding model with an orthogonal sp 3 set of orbitals, interactions up to second neighbor, and spin-orbit coupling is used to describe the electronic and optical properties of bulk InAs and AlSb as well as InAs/AlSb superlattices. The tight-binding parameters required for the model are obtained by fitting existing band structures for bulk materials. It is found that with the evaluated tight-binding parameters the model describes very accurately the band structure and the optical properties of the bulk materials. Then the model is used in order to investigate the electronic and optical properties of InAs/AlSb superlattices. It is shown that interface states located in the InSb-like interface quantum wells produce a narrow upper valence band. The effective masses and the variation of the energy gap with interface structure and lattice periodicity are also examined. Additionally the optical functions for the superlattice are calculated, and from the second derivative of 2 the critical points are obtained. Finally the optical anisotropy in the superlattice plane is investigated.

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Section: Methodssupporting

confidence: 82%

Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices

Theodorou

Tsegas

2000

Phys. Rev. B

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“…3, and the distance between the localized orbitals. 43 This approximation neglects the spin-orbit coupling for the evaluation of the matrix element itself but correlations of the density of states are treated correctly giving a reasonable result for the optical conductivity. 44 The Figures 14 and 15 show the conductivity obtained from models A (Mašek) and B (Tang, Flatté), respectively.…”

Section: Conductivitymentioning

confidence: 99%

Electronic and optical properties of ferromagneticGa1−xMnxAsin a multiband tight-binding approach

Turek

Siewert²,

Fabian³

2008

Phys. Rev. B

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We consider the electronic properties of ferromagnetic bulk Ga 1−x Mn x As at zero temperature using two realistic tight-binding models, one due to Tang and Flatté and one due to Mašek. In particular, we study the density of states, the Fermi energy, the inverse participation ratio, and the optical conductivity with varying impurity concentration x = 0.01-0.15. The results are very sensitive to the assumptions made for the on-site and hopping matrix elements of the Mn impurities. For low concentrations, x Ͻ 0.02, Mašek's model shows only small deviations from the case of p-doped GaAs with increased number of holes while within Tang and Flatté's model an impurity-band forms. For higher concentrations x, Mašek's model shows minor quantitative changes in the properties we studied while the results of the Tang and Flatté model exhibit qualitative changes including strong localization of eigenstates with energies close to the band edge. These differences between the two approaches are in particular visible in the optical conductivity, where Mašek's model shows a Drude peak at zero frequency while no such peak is observed in Tang and Flatté's model. Interestingly, although the two models differ qualitatively the calculated effective optical masses of both models are similar within the range of 0.4-1.0 of the free-electron mass.

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“…In any case it does not include ab initio the effects of the electron-phonon interaction either. Nor do the rather simplified calculations which have been performed for the effect of strain [17,22,23] or electric fields [24] on the dielectric function.…”

Section: Introductionmentioning

confidence: 99%

Renormalization of the Optical Response of Semiconductors by Electron-Phonon Interaction

Cardona

2001

phys. stat. sol. (a)

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In the past five years enormous progress has been made in the ab initio calculations of the optical response of electrons in semiconductors. The calculations include the Coulomb interaction between the excited electron and the hole left behind, as well as local field effects. However, they are performed under the assumption that the atoms occupy fixed equilibrium positions and do not include effects of the interaction of the lattice vibrations with the electronic states (electron-phonon interaction). This interaction shifts and broadens the energies at which structure in the optical spectra is observed, the corresponding shifts being of the order of the accuracy claimed for the ab initio calculations. These shifts and broadenings can be calculated with various degrees of reliability using a number of semiempirical and ab initio techniques, but no full calculations of the optical spectra including electron-phonon interaction are available to date. This article discusses experimental and theoretical aspects of the renormalization of optical response functions by electron-phonon interaction, including both temperature and isotopic mass effects. Some of the theoretical techniques used can also be applied to analyze the renormalization of other response functions, such as the phonon spectral functions, the lattice parameters, and the elastic constants.

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Piezooptical Properties of GaAs and InP

Cited by 11 publications

References 20 publications

Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices

Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices

Electronic and optical properties of ferromagneticGa1−xMnxAsin a multiband tight-binding approach

Renormalization of the Optical Response of Semiconductors by Electron-Phonon Interaction

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