2005
DOI: 10.1109/jmems.2005.845456
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Piezoresistive accelerometers for MCM-package - Part II:The packaging

Abstract: This paper is the second part of a twofold work related to the full integration of piezoresistive accelerometers in a multichip modules-deposited (MCM-D) type with flip-chip interconnection package. This part is fully devoted to the packaging of an accelerometer with movable parts in an MCM so a description of the package fabrication is given. The accelerometer was designed taking into account its final package and, therefore, some modifications to the standard piezoresistive accelerometer were done. In partic… Show more

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Cited by 12 publications
(7 citation statements)
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“…The flux residue is benign and usually remains on the base of solder ball after reflow. Cabruja et al have successfully demonstrated in using a fluxless solder paste for packaging MEMS pressure sensors [27] by providing a good clearance distance (approximately 500 μ m) between the solder bump and the MEMS active structures. For this design, most solder pads were located on the die’s perimeter [28] similar to a wire bonding arrangement, which results in a larger die size.…”
Section: Introductionmentioning
confidence: 99%
“…The flux residue is benign and usually remains on the base of solder ball after reflow. Cabruja et al have successfully demonstrated in using a fluxless solder paste for packaging MEMS pressure sensors [27] by providing a good clearance distance (approximately 500 μ m) between the solder bump and the MEMS active structures. For this design, most solder pads were located on the die’s perimeter [28] similar to a wire bonding arrangement, which results in a larger die size.…”
Section: Introductionmentioning
confidence: 99%
“…These accelerometers are piezo crystal based, [15] but does not use a single proof-mass. [16] The accuracy required does not need to go this expense.…”
Section: Data Translationmentioning
confidence: 99%
“…The magnitude of the diffusion parameter (7) determines the relative importance of diffusional resistance to the copper ion transport as will be discussed in more detail below. Appropriate boundary conditions for the solution of equation (6) are C * i = 1 at y * = 0 (i.e. the concentration of Cu ion is equal to the bulk concentration at the entrance to the channel) and dC i /dy * = 0 at y * = 1 (i.e.…”
Section: Theoretical Approach With a Diffusion Systemmentioning
confidence: 99%
“…The physical meaning of ξ D can be explained with the exact solution of equation (6). This dimensionless parameter quantifies the relative importance of diffusional resistance relative to the consumption of Cu ion.…”
Section: Theoretical Approach With a Diffusion Systemmentioning
confidence: 99%