2018
DOI: 10.1088/1361-6439/aaab2f
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Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

Abstract: In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistivedetection E Mile, G Jourdan, I Bargatin et al.

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Cited by 21 publications
(13 citation statements)
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“…Rinaldi et al [186] demonstrated the ultra-thin piezoelectric resonator and filters for the super high frequency (SHF) range for wireless communication purpose. Esfahani et al [187] presents a fabrication of piezoresistive based silicon nanowires resonator for obtaining resonance behavior of NEMS resonator with frequencies of 100 MHz showing a Lorentzian non-linear behaviour with Allain deviation of 3-8 ppm. The various steps involve in the fabrication of the Si NW on SOI wafer are summarized as (a) e-beam patterning of silicon nanowire, (b) bilayer patterning lift-off mask, (c) metallic coating by thermal-evaporation followed by lift-off (d) Si etching (e) low temperature oxide coating via LPCVD (f) oxide etching (g) MEMS patterning (f) deep etching of Silicon via bosch process (i) hydrofluoric acid releases the NW [177] as shown in the fig.…”
Section: Recent Progress On Si-mems Resonant Sensorsmentioning
confidence: 99%
“…Rinaldi et al [186] demonstrated the ultra-thin piezoelectric resonator and filters for the super high frequency (SHF) range for wireless communication purpose. Esfahani et al [187] presents a fabrication of piezoresistive based silicon nanowires resonator for obtaining resonance behavior of NEMS resonator with frequencies of 100 MHz showing a Lorentzian non-linear behaviour with Allain deviation of 3-8 ppm. The various steps involve in the fabrication of the Si NW on SOI wafer are summarized as (a) e-beam patterning of silicon nanowire, (b) bilayer patterning lift-off mask, (c) metallic coating by thermal-evaporation followed by lift-off (d) Si etching (e) low temperature oxide coating via LPCVD (f) oxide etching (g) MEMS patterning (f) deep etching of Silicon via bosch process (i) hydrofluoric acid releases the NW [177] as shown in the fig.…”
Section: Recent Progress On Si-mems Resonant Sensorsmentioning
confidence: 99%
“…The initial linear variation of the high-SNR mode at low voltages is evident until mode splitting takes place at Point A, beyond which each mode follows its distinct path. Hence, the dependence of the frequency spectrum on actuation differs significantly from the linear response of single NW resonators 33,35 at high voltages. This trend was further verified by measurements (see ESI Fig.…”
mentioning
confidence: 95%
“…S4 †). 33 A doping level of 10 20 cm −3 is employed at the SOI wafer surface. Electrostatic actuation is implemented using one of the two adjacent gate electrodes with a nominal gap of 180 nm.…”
mentioning
confidence: 99%
“…In addition, it is compatible with the scale of target biochemical molecular for silicon nanowires with diameters less than 100 nm, whose unique advantages in biochemical detection is given to silicon nanowires [16,17]. In recent years, the applications of silicon nanowires in various fields have been widely studied, including solar cells, photodetectors, resonators, thermoelectric generator and so on [18][19][20][21][22]. Especially, silicon nanowires are designed as biosensors for the detection of various targets, which could detect nucleic acids, proteins, virus, and chemical species [23][24][25][26][27][28].…”
Section: Introductionmentioning
confidence: 99%