Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Wang, Xingfu; Yu, Ruomeng; Jiang, Chunyan; Hu, Weiguo; Wu, Wenzhuo; Ding, Y.; Peng, Wenbo; Li, Shuti; Wang, Zhong Lin

doi:10.1002/adma.201601721

Cited by 107 publications

(64 citation statements)

References 27 publications

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“…Beyond the methods of tuning alloy composition and controlling the thickness of AlGaN, a novel approach of great simplicity, low cost, and effective modulation on HEG is expected, when the piezotronic effect is presented to tune/control the physical properties. [38] As shown in Figure 5a, lateral AlGaN/AlN/GaN heterostructured microwires orientated along a-axis are synthesized on Si substrate by metalorganic chemical vapor deposition (MOCVD). Therefore, figuring out the working mechanism of the piezotronic effect on HEG is very importance for the understanding of basic fundamentals and designing of high-performance piezotronic device.…”

Section: Piezotronic Effect In Heterojunctionmentioning

confidence: 99%

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Wang

2017

Adv Eng Mater

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Wurtzite-structured III-group nitrides, like GaN, InN, AlN, and their alloys, present both piezoelectric and semiconducting properties under straining owing to the polarization of ions in a crystal with non-central symmetry. The piezoelectric polarization charges are created at the interface when a strain is applied. As a result, a piezoelectric potential (piezopotential) is produced, which is used as a "gate" to tune/control the charge transport behavior across a metal/semiconductor interface or a p-n junction. This is called as piezotronic effect. A series of piezotronic devices and applications have been developed, such as piezotronic nanogenerators (NGs), piezotronic transistors, piezotronic logic devices, piezotronic electromechanical memories, piezotronic enhanced biochemical, and gas sensors and so on. With the flourished development of piezotronic effect, the piezo-phototronic effect, as the threeway coupling of piezoelectric polarization, semiconductor properties, and optical excitation, utilizes the piezopotential to modulate the energy band profile and control the carrier generation, transportation, separation, and/or recombination for improving performances of optoelectronic devices. This paper intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo-phototronics, covering from the fundamental principles to devices and applications. This study will provide important insight into the potential applications of GaN based electronic/optoelectronic devices in sensing, active flexible/stretchable electronics/optoelectronics, energy harvesting, human-machine interfacing, biomedical diagnosis/therapy, and prosthetics. Figure 2. Piezopotential in wurtzite crystal. a) Atomic model of the wurtzite Àstructured ZnO. b) The piezopotential distributed along a ZnO NW under axial strain calculated by numerical methods. The growth direction of the NW is along the c-axis. (Reproduced with permission. [27]

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Section: Piezotronic Effect In Heterojunctionmentioning

confidence: 99%

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Wang

2017

Adv Eng Mater

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“…[5,7,27,28] Authors propose fabrication of SGT-based strain sensor inside AlGaN/GaN heterostructure. Its operating principle is based upon piezotronics effects that modify carriers parameters.…”

Section: Model Application For a Sgt-based Semi-polar Strain Tensormentioning

confidence: 99%

“…[1,2] It is due to the coupling of two phenomena: the energy bands deflection on the heterostructure interface that forms the potential well with twodimensional electron gas (2DEG) and the piezoelectric effect. [5] The AlGaN/GaN heterostructures are one of the materials that are considered to constitute the base of piezotronics, although published results focus mostly on the analysis of piezopotentials inside monocrystalline materials like ZnO nanowires. Firstly, during an epitaxial growth, because of temperature changes and lattice mismatch, static in-built stresses inside heterostructures are introduced resulting in induction of the piezopotentials inside heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Stress and Induced Electric Polarization Modeling in Polar, Semi‐polar, and Non‐Polar AlGaN/GaN Heterostructures for Piezotronics Application

Paszkiewicz

2017

Adv Eng Mater

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Author developed a comprehensive model that allows analysis of polarization states inside AlGaN/ GaN heterostructures with a special attention devoted to its applications in piezotronics field. The model enables prediction of polarization and stress states inside a heterostructure with arbitrary chosen Al content and of any crystallographic orientation. This is an issue of great importance for piezotronics devices development for both applications: sensor technology Strain Gated Transistors. In the model an approach focused on a layer matching process at nanoscale is applied. Thanks to this it is possible to describe polarization states in heterostructure in technology agnostic way. In this paper, method for predicting polarization states and stress states in AlGaN/GaN heterostructure is presented.

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“…Piezo-phototronic devices enable a new direction for smart materials [1][2][3]. The concept is successfully employed on condensed materials [3][4][5], one-dimensional (1D) nanomaterial [6], and 2D materials [7].…”

Section: Introductionmentioning

confidence: 99%

Using in-situ synchrotron x-ray diffraction to investigate phase transformation and lattice relaxation of a three-way piezo-phototronic soft material

Hsu

Weng

et al. 2017

Semicond. Sci. Technol.

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A poly(vinylidene fluoride-co-trifluoro-ethylene) piezoelectric polymer is blended with nano particles of titanium oxide phthalocyanine to bridge photoconductive and piezoelectric effects. In this study, a system is examined by in situ synchrotron x-ray to test a three-way piezophototronic soft-material design. The sample is heated for in situ phase transformation characterization. The semi-crystalline poly (vinylidene fluoride-co-trifluoro-ethylene) polymer gradually transforms to an amorphous structure. A complementary piezoelectric experiment before and after the heating experiment shows that the piezoelectric performance is proportional to the phase ratio. Secondly, the system is examined to test its phototronic effect. Piezoelectric responses are measured by controlling the light illumination. The positive and negative controls of light illumination which validate this newly-designed system can be modulated by a three-way piezo-phototronic effect. In-situ synchrotron x-ray diffraction experiments are employed to measure the microstructure evolution as a function of applied voltage up to 800 V. We then Semiconductor Science and Technology

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Cited by 107 publications

References 27 publications

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Stress and Induced Electric Polarization Modeling in Polar, Semi‐polar, and Non‐Polar AlGaN/GaN Heterostructures for Piezotronics Application

Using in-situ synchrotron x-ray diffraction to investigate phase transformation and lattice relaxation of a three-way piezo-phototronic soft material

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