Piezotronic effect on two-dimensional electron gas in AlGaN/GaN heterostructure

Huang, Fobao; Chen, Jianghua; Ding, Yaxin; Huang, Wei

doi:10.1016/j.nanoen.2022.107098

Cited by 13 publications

(6 citation statements)

References 45 publications

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“…As a result, many sub-bands are confined by an inclined potential very close to the interface. 32,33 For a given sub-band with wave function Φ 0 , the Rashba coefficient is given by 29 where represents the quantum expectation with respect to the sub-band. α R1 and α R2 are the SIA and bulk Rashba coefficients, respectively.…”

Section: Soc Theory In Wurtzite Semiconductor Heterostructurementioning

confidence: 99%

“…As a result, many sub-bands are confined by an inclined potential very close to the interface. 32,33 For a given sub-band with wave function F 0 , the Rashba coefficient is given by 29…”

mentioning

confidence: 99%

“…where the Fermi momentum is k F ¼ ffiffiffiffiffiffiffiffiffi ffi 2pN p with the electron density N. a D1 relies on the effective width of the interfacial potential, and the second term is determined by the electron density, all of which can be tuned by piezoelectric polarization. 32,33 For the (Al, Ga) N/GaN heterostructure, the Dresselhaus parameters in (6) were chosen as b = 3.959 and g = 0.32 eV Å 3 . 23 Due to the very close b values of (4.028) AlN and (3.959) GaN and the predominant wave function in the GaN layer, we considered the Dresselhaus parameter b = 3.959 as a constant across the heterostructure.…”

mentioning

confidence: 99%

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Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure

Hu,

Huang,

Liu

2023

Phys. Chem. Chem. Phys.

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Section: Soc Theory In Wurtzite Semiconductor Heterostructurementioning

confidence: 99%

“…As a result, many sub-bands are confined by an inclined potential very close to the interface. 32,33 For a given sub-band with wave function F 0 , the Rashba coefficient is given by 29…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure

Hu,

Huang,

Liu

2023

Phys. Chem. Chem. Phys.

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“…In III-nitrides, the noncentrosymmetric crystal structure and lattice mismatch in the heterostructure will cause the spontaneous and piezoelectric polarization along the c -direction, respectively. − Consequently, AlGaN UV detectors based on the heterostructure polarization effect also attract tremendous interest. − First, the heterostructure polarization-induced built-in field can improve the photogenerated electron–hole pairs’ separation efficiency. Besides, the heterostructure band offset and polarization-induced built-in field can form a triangular potential well that can gather free carriers and provide a highly conductive channel. , …”

Section: Introductionmentioning

confidence: 99%

The Insertion of an AlN Spacer between the Barrier and the Channel Layer for a Polarization-Enhanced AlGaN-Based Solar-Blind Ultraviolet Detector

Fang,

Jiang,

Wang

et al. 2024

ACS Appl. Electron. Mater.

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The AlGaN-based solar-blind ultraviolet (SBUV) detectors have tremendous potential applications in missile warning, secret communications, deep space exploration, etc. In this work, we have proposed a strategy to improve the response as well as the photo-to-dark current ratio (PDCR) of the AlGaNbased polarization-enhanced SBUV detector by inserting an AlN spacer between the high-Al barrier and the low-Al channel layer. On the one hand, the AlN spacer can enhance the polarization field and increase the effective conduction band offset, increasing the photogenerated electron−hole pairs' separation efficiency and channel conduction ability. On the other hand, the AlN spacer can lift the effective barrier height of the channel electrons, suppressing the dark current. Moreover, the AlN spacer can reduce the alloy disorder scattering and Coulomb scattering of the channel electrons, enhancing electron mobility. Consequently, an extremely low dark current below 1 pA and a PDCR exceeding 10 8 under an incident light power density of 5.4 μW/cm 2 at 250 nm are obtained at 5 V. The spectral response shows a peak responsivity of 1.2 × 10 6 A/W, corresponding to a current gain of over 5 × 10 6 , which is near 3 orders of magnitude higher than that of the reference detector without an AlN spacer layer. The light power density-dependent response and response time measurements are also performed to investigate the gain enhancement mechanism. The detectors are employed into a scanning imaging system to obtain a SBUV image to confirm the superiority of introducing an AlN spacer layer into AlGaN-based polarization-enhanced detectors in real applications.

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“…The presence of a high concentration of two-dimensional electron gas (2DEG) near its heterojunction is attributed to piezoelectric and spontaneous polarization effects. When the target binds to the gate surface, the 2DEG concentration changes, which leads to current changes [ 23 , 24 ]. Only a simple modification of the probe is required to produce a sensitive analytical signal without additional radioactive, fluorescent, or enzymatic labeling.…”

Section: Introductionmentioning

confidence: 99%

A Miniature Biomedical Sensor for Rapid Detection of Schistosoma japonicum Antibodies

Hu,

Jiang,

Yang

et al. 2023

Biosensors

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Schistosomiasis, typically characterized by chronic infection in endemic regions, has the potential to affect liver tissue and pose a serious threat to human health. Detecting and screening for this disease early on is crucial for its prevention and control. However, existing methods encounter challenges such as low sensitivity, time-consuming processes, and complex sample handling. To address these challenges, we report a soluble egg antigen (SEA)-based functionalized gridless and meander-type AlGaN/GaN high electron mobility transistors (HEMT) sensor for the highly sensitive detection of antibodies to Schistosoma japonicum. Immobilization of the self-assembled membrane on the gate surface was verified using a semiconductor parameter analyzer, scanning electron microscope (SEM), and atomic force microscopy (AFM). The developed biosensor demonstrates remarkable performance in detecting anti-SEA, exhibiting a linear concentration range of 10 ng/mL to 100 μg/mL and a sensitivity of 0.058 mA/log (ng/mL). It also exhibits similar excellent performance in serum systems. With advantages such as rapid detection, high sensitivity, miniaturization, and label-free operation, this biosensor can fulfill the requirements for blood defense.

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Piezotronic effect on two-dimensional electron gas in AlGaN/GaN heterostructure

Cited by 13 publications

References 45 publications

Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure

Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure

The Insertion of an AlN Spacer between the Barrier and the Channel Layer for a Polarization-Enhanced AlGaN-Based Solar-Blind Ultraviolet Detector

A Miniature Biomedical Sensor for Rapid Detection of Schistosoma japonicum Antibodies

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